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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Simpson, Nick
University of Bristol
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Publications (9/9 displayed)
- 2024Toward an Accessible Electrical Conductivity Characterisation Method for Additively Manufactured Conductors
- 2024Fabrication of Insulation Coatings on Additively Manufactured CuCrZr Electrical Windingscitations
- 2024Investigation of Post Processing and Robust Insulation of High-Performance Additively Manufactured Al-Fe-Zr Electrical Machine Windingscitations
- 2024Electrothermal power cycling of 15 kV SiC PiN diodescitations
- 2024Electrothermal power cycling of 15 kV SiC PiN diodescitations
- 2022Electrical conductivity of additively manufactured copper and silver for electrical winding applicationscitations
- 2022Electrical Conductivity of Additively Manufactured Copper and Silver for Electrical Winding Applicationscitations
- 2022Electrical Conductivity of Additively Manufactured Copper and Silver for Electrical Winding Applications
- 2016Multi-Physics Experimental Investigation into Stator-Housing Contact Interfacecitations
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article
Electrothermal power cycling of 15 kV SiC PiN diodes
Abstract
Through extensive experimental measurements for the static and dynamic characteristics, the commercially available 15 kV Silicon Carbide (SiC) PiN diode are evaluated by power cycling. The forward voltage of diodes is used to indirectly measure the junction temperature. The SiC PiN diodes feature smaller die size, less reverse recovery charge and less on-resistance when compared to the commercially available closely rated Silicon PiN diodes. Nevertheless, during the power cycling experiments, the bipolar degradation and the degradation of contact metallization in SiC PiN diode gives rise to the increase of on-resistance even though its on-state losses is not as high as in the Silicon device. Such degradations are not observed from the Silicon PiN diode for the same junction temperature and the same high-temperature duration.