• Terada, Hirotoshi
• Rosseel, Dries
• Arata, Ikuo
• Vervaeke, Michael
• Thienpont, Hugo

Abstract

In this study, we have developed an aspherical solid immersion lens (SIL) made of gallium arsenide (GaAs) for semiconductor failure analysis. A SIL is an optical component to dramatically increase the numerical aperture and the spatial resolution of a microscopy system by attaching it to the backside of the device-under-test. To further enhance the spatial resolution of the optical microscopy system, a shorter wavelength light source has also been introduced. In the past, we have developed a spherical SIL made of silicon (Si), which is the same material as the device under test. However, Si is not transparent for wavelengths shorter than around 1100 nm. To enable the use of a SIL at shorter wavelengths, we chose GaAs as SIL material, which is transparent at shorter wavelengths than Si and has a refractive index very close to that of Si. However, a spherical GaAs SIL features a more pronounced spherical aberration due to the difference in refractive index between the device-under-test (Si) and that of the SIL (GaAs) deteriorating the optical resolution of the microscopy system. We have therefore designed an aspherical GaAs-SIL which makes it possible to correct spherical aberration. We applied diamond tooling as a technique for manufacturing the SIL shape with a required surface irregularity below 100 nm peak-to-valley, resulting in a diffraction limited performance of the optical system for semiconductor failure analysis with a performance at around 0.18 mu m cutoff.

Topics

• impedance spectroscopy
• surface
• semiconductor
• Silicon
• optical microscopy
• Gallium