| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Ross, Glenn
Aalto University
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (35/35 displayed)
- 2024Scaling of piezoelectric in-plane NEMS : Towards nanoscale integration of AlN-based transducer on vertical sidewallscitations
- 2024Electromigration Reliability of Cu3Sn Microbumps for 3D Heterogeneous Integration
- 2024Metalorganic Chemical Vapor Deposition of AlN on High Degree Roughness Vertical Surfaces for MEMS Fabricationcitations
- 2024Thermal Boundary Conductance of Direct Bonded Aluminum Nitride to Silicon Interfacescitations
- 2024Investigative characterization of delamination at TiW-Cu interface in low-temperature bonded interconnectscitations
- 2023Impact of Inherent Design Limitations for Cu–Sn SLID Microbumps on Its Electromigration Reliability for 3D ICscitations
- 2023Achieving low-temperature wafer level bonding with Cu-Sn-In ternary at 150 °Ccitations
- 2023Co, In, and Co–In alloyed Cu6Sn5 interconnects: Microstructural and mechanical characteristicscitations
- 2023In-Plane AlN-based Actuator: Toward a New Generation of Piezoelectric MEMScitations
- 2022Investigation of the microstructural evolution and detachment of Co in contact with Cu–Sn electroplated silicon chips during solid-liquid interdiffusion bondingcitations
- 2022Unlocking the Potential of Piezoelectric Films Grown on Vertical Surfaces for Inertial MEMScitations
- 2022Finite element simulation of solid-liquid interdiffusion bonding process: Understanding process dependent thermomechanical stresscitations
- 2022Finite element simulation of solid-liquid interdiffusion bonding processcitations
- 2022Aluminium corrosion in power semiconductor devicescitations
- 2021Characterization of AlScN-based multilayer systems for piezoelectric micromachined ultrasound transducer (pMUT) fabricationcitations
- 2021Characterization of AlScN-based multilayer systems for piezoelectric micromachined ultrasound transducer (pMUT) fabricationcitations
- 2021Wafer Level Solid Liquid Interdiffusion Bondingcitations
- 2021Stability and residual stresses of sputtered wurtzite AlScN thin filmscitations
- 2021Characterization of AlScN-Based Multilayer Systems for Piezoelectric Micromachined Ultrasound Transducer (pMUT) Fabricationcitations
- 2021A humidity-induced novel failure mechanism in power semiconductor diodescitations
- 2021Low-temperature Metal Bonding for Optical Device Packagingcitations
- 2020The impact of residual stress on resonating piezoelectric devicescitations
- 2020The impact of residual stress on resonating piezoelectric devicescitations
- 2020MOCVD Al(Ga)N Insulator for Alternative Silicon-On-Insulator Structurecitations
- 2020Metalorganic chemical vapor deposition of aluminum nitride on vertical surfacescitations
- 2019Intermetallic Void Formation in Cu-Sn Micro-Connects
- 2019The Role of Ultrafine Crystalline Behavior and Trace Impurities in Copper on Intermetallic Void Formationcitations
- 2018Process Integration and Reliability of Wafer Level SLID Bonding for Poly-Si TSV capped MEMScitations
- 2018The effect of platinum contact metallization on Cu/Sn bondingcitations
- 2018Stability of Piezoelectric Al1-xScxN Thin Films
- 2017XRD and ToF-SIMS study of intermetallic void formation in Cu-Sn micro-connectscitations
- 2017Gigahertz scanning acoustic microscopy analysis of voids in Cu-Sn micro-connectscitations
- 2017Key parameters influencing Cu-Sn interfacial void formation
- 2016Void formation and its impact on Cu-Sn intermetallic compound formationcitations
- 2014Void formation in Cu-Sn SLID bonding for MEMScitations
Places of action
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article
Aluminium corrosion in power semiconductor devices
Abstract
<p>In this study, insulated gate bipolar transistor (IGBT) power modules were exposed to high voltage, high humidity, high temperature and reverse bias (HV-H<sup>3</sup>TRB) conditions until end-of-life (EoL). The limited lifetime of power semiconductor devices when used in demanding applications involving high relative humidity during operation is commonly reported to be associated with the design of the edge termination in power transistor or diode chips. A physics-of-failure (PoF) oriented methodology was adopted in failure analysis, including using lock-in thermography (LiT) for failure localisation and using an advanced microwave-induced plasma (MIP) decapsulation technique for the selective etching of the edge termination polyimide passivation film. A focused ion beam (FIB) was utilised to create a cross-section of the samples for both scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDX) analysis. The evidence gathered using the physics-of-failure methodology were compared with the results from advanced statistical analysis of the failure distributions in Weibull plots, including comparison of α and β parameters. This analysis revealed correlation with the Weibull distributions and the results from the physics-of-failure. Aluminium corrosion products were systematically observed on guard rings (GR) and field plates (FP) showing that the migration of these corrosion products forming an electrical path between the guard rings that seems to be a major failure mechanism in high humidity environments when reverse bias voltage is applied.</p>