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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Iannuzzo, Francesco
Aalborg University
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (14/14 displayed)
- 2024Proof-of-Concept for an On-Chip Kelvin-Emitter RTD Sensor for Junction Temperature Monitoring of IGBTscitations
- 2023Thermal Characteristics of Liquid Metal Interconnects for Power Semiconductorscitations
- 2023Thermal Characteristics of Liquid Metal Interconnects for Power Semiconductorscitations
- 2019Comparative study of wire bond degradation under power and mechanical accelerated testscitations
- 2019Highly Reliable Package using Cu Particles Sinter Paste for Next Generation Power Devices
- 2019Cost-Effective Prognostics of IGBT Bond Wires With Consideration of Temperature Swingcitations
- 2018Thermal modeling of wire-bonded power modules considering non-uniform temperature and electric current interactionscitations
- 2018Thermal modeling of wire-bonded power modules considering non-uniform temperature and electric current interactionscitations
- 2018Effect of short-circuit stress on the degradation of the SiO2 dielectric in SiC power MOSFETscitations
- 2018Effect of short-circuit stress on the degradation of the SiO 2 dielectric in SiC power MOSFETscitations
- 2018Failure analysis of a degraded 1.2 kV SiC MOSFET after short circuit at high temperaturecitations
- 2017Impact of bending speed and setup on flex cracks in multilayer ceramic capacitorscitations
- 2016Short-Circuit Robustness Assessment in Power Electronic Modules for Megawatt Applicationscitations
- 2005FPGA implementation of the race-control algorithm for the full-bridge passive resonant commutated poles converter
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article
Thermal modeling of wire-bonded power modules considering non-uniform temperature and electric current interactions
Abstract
To assess power devices’ reliability, it is crucial to have a relatively accurate thermal approach which provides valid temperature estimates. In this paper, a commercial Si IGBT and SiC MOSFET power modules are investigated. Also, the electric current-induced effects on bond wires and the correlation between the non-uniform temperature distribution and electrical conductivity of the sensitive constituent materials are studied. A more realistic active area of the die is defined by excluding inactive regions, i.e., the gate area, gate runners, and termination ring. Also, the electric current distribution among parallel bond wires attached to the dies’ metalization pads is investigated. A comparison between an approach which includes all the above aspects with a conventional one where a thermal power with the same total value, but unifrom, is injected into the semiconductor dies is made, While an acceptable error is found for Si IGBTs, a very significant difference is observed in SiC MOSFETs.