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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Azam, Siraj |
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| Ali, M. A. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Musca, Charles
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Topics
Publications (8/8 displayed)
- 2009Low temperature N2-based passivation technique for porous silicon thin filmscitations
- 2007Dielectric thin films for MEMS-based optical sensorscitations
- 2006Stress in low-temperature plasma enhanced chemical vapour deposited silicon nitride thin filmscitations
- 2005Characterization of Mechanical Properties of Silicon Nitride Thin Films for MEMS Devices by Nanoindentation
- 2005Determination of mechanical properties of PECVD silicon nitride thin films for tunable MEMS Fabry-Perot optical filterscitations
- 2005Evaluation of Plasma Deposited Silicon Nitride Thin Flims for Microsystems Technologycitations
- 2004Laser-Beam-Induced Current Mapping of Spatial Nonuniformities in Molecular Beam Epitaxy As-Grown HgCdTecitations
- 2004Dark Currents in Long Wavelength Infrared HgCdTe Gated Photodiodescitations
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article
Dielectric thin films for MEMS-based optical sensors
Abstract
Nanoindentation and optical measurements have been employed in order to investigate the mechanical properties of low-temperature (50-330 degrees C) plasma-enhanced chemical vapour deposited (PECVD) SiNx as well as thermally evaporated SiOx, and Ge thin films for applications in micro-electro-mechanical systems (MEMS) fabricated on temperature sensitive, non-standard substrates. The temperature of the SiN, deposition process is found to strongly influence Young's modulus, hardness, and stress, with a critical deposition temperature in the 100 degrees C to 150 degrees C range which depends on the details of other deposition conditions such as chamber pressure and RF-power. The properties of PECVD SiN, films deposited above this critical temperature are found to be suitable for MEMS applications, whereas films deposited at lower temperatures exhibit low Young's modulus and hardness, as well as environment-induced stress instabilities. The investigated thin films have been incorporated into a monolithic integrated technology comprising low-temperature (-125 degrees C) MEMS and HgCdTe IR detectors, in order to realize successful prototypes of tuneable IR microspectrometers. (C) 2007 Elsevier Ltd. All rights reserved.