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Khryashchev, Leonid
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Publications (9/9 displayed)
- 2018Low-Temperature Wafer-Scale Deposition of Continuous 2D SnS2 Filmscitations
- 2018Atomic layer deposition of crystalline molybdenum oxide thin films and phase control by post-deposition annealingcitations
- 2017Atomic Layer Deposition of Crystalline MoS2 Thin Filmscitations
- 2016Silicon Nanocrystals in Silicacitations
- 2014Continuous-Wave Laser Annealing of a Si/SiO2 Superlatticecitations
- 2008Structural investigation of re-deposited layers in JETcitations
- 2008Ion irradiation of carbon nanotubes encapsulating cobalt crystalscitations
- 2008Free-standing SiO2 films containing Si nanocrystals directly suitable for transmission electron microscopycitations
- 2006Continuous-wave laser annealing of free-standing Si/SiO2 superlatticecitations
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article
Free-standing SiO2 films containing Si nanocrystals directly suitable for transmission electron microscopy
Abstract
Free-standing SiOx films were prepared by molecular beam deposition following back side Silicon (Si) wafer etching in tetramethyl ammonium hydroxide (TMAH) solution. Transmission Electron Microscopy confirms the presence of Si nanocrystals in the as-prepared film. Raman spectroscopy show that deep structural film reorganization appears during high temperature laser treatment. The laser annealing decreases photoluminescence from the films. (C) 2007 Elsevier Ltd. All rights reserved.