| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Landesman, Jean-Pierre
University of Rennes
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (15/15 displayed)
- 2023Mechanical and optical properties of amorphous silicon nitride-based films prepared by electron cyclotron resonance plasma-enhanced chemical vapor depositioncitations
- 2022Low-temperature spatially-resolved luminescence spectroscopy of microstructures with strained III-V quantum wells
- 2022Strain engineering in III-V photonic components through structuration of SiN x filmscitations
- 2022Polarimetric photoluminescence microscope for strain imaging on semiconductor devicescitations
- 2021Stress Engineering of Dielectric Films on Semiconductor Substrates
- 2021Mechanical and Optical Properties of Amorphous SiN-Based Films Prepared By ECR-PECVD and CCP-PECVD
- 2021Low temperature micro-photoluminescence spectroscopy of microstructures with InAsP/InP strained quantum wellscitations
- 2021Low temperature micro-photoluminescence spectroscopy of microstructures with InAsP/InP strained quantum wellscitations
- 2021Mechanical strain mapping of GaAs based VCSELscitations
- 2020Photoluminescence mapping of the strain induced in InP and GaAs substrates by SiN stripes etched from thin films grown under controlled mechanical stresscitations
- 2016Defect formation during chlorine-based dry etching and their effects on the electronic and structural properties of InP/InAsP quantum wellscitations
- 2015Microstructure based optical modeling of ZnO- porous silicon permeated nanocompositescitations
- 2006Photonics integrated circuits on plasma-polymer-HMDSO: Single-mode TE00-TM00 straight waveguides, S-Bends, Y-Junctions and Mach-Zehnder Interferometers
- 2006Photonics integrated circuits on plasma-polymer-HDMSO/Single-mode TEOO-TMOO straight waveguides, S-Bends, Y-Junctions and Mach-Zehnder Intererometers.
- 2006Conception of optical integrated circuits on polymerscitations
Places of action
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article
Conception of optical integrated circuits on polymers
Abstract
The authors present a successful design, realisation and characterisation of single-mode TE00–TM00 rib optical waveguides composed of SU-8 polymer. For the simulation, a generic software package that provides an interactive and graphical environment for analysis by polarised Semi-Vectorial Finite Difference (SVFD) method of all kinds of integrated optical waveguides, such as buried channel, raised strip, rib, embedded, or ridge waveguides, has been implemented and tested. In this method we have taken into account the terms due to the interface between each layer. After realisation of various single mode optical waveguides on SU-8 polymer and Spin on Glass (SOG) like straight, S-bends, Y-junctions, Mach-Zehnder (MZ) interferometers, the linear absorption coefficient of energy αTE–TM of such rib waveguides have been measured and estimated, respectively, near 0.32 and 0.46 cm−1 for both optical modes TE00 and TM00 on Si/SiO2/SU-8 structures. These values yield optical losses of 1.36 and 2.01 dB/cm. Optical losses ascribed to Si/SiO2/SOG/SU-8 microstructures have been evaluated to 2.33 and 2.95 dB/cm for both polarisations. Hence, as a crucial step for designing polymer components devoted to microsensors applications (pressure, heat transfert), the SU-8 polymer appears as a promising candidate for integrated optics with low optical losses