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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Zdrojek, Mariusz
Warsaw University of Technology
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (12/12 displayed)
- 2024Graphene-based nanocomposites as gamma- and X-ray radiation shieldcitations
- 2022Influence of the filler distribution on PDMS-graphene based nanocomposites selected propertiescitations
- 2022Modelling and Characterisation of Residual Stress of SiC-Ti3C2Tx MXene Composites Sintered via Spark Plasma Sintering Methodcitations
- 2021Terahertz shielding properties of carbon black based polymer nanocompositescitations
- 2021Terahertz Shielding Properties of Carbon Black Based Polymer Nanocomposites
- 2020Technology and optimization of hafnium oxynitride (HfOxNy) thin-films formed by pulsed-DC reactive magnetron sputtering for MIS devicescitations
- 2020Substrate-Induced Variances in Morphological and Structural Properties of MoS<inf>2</inf> Grown by Chemical Vapor Deposition on Epitaxial Graphene and SiO<inf>2</inf>citations
- 2020Study of optical properties of graphene flakes and its derivatives in aqueous solutionscitations
- 2017Characterization of Finite-Width Ground Coplanar Waveguides on High Resistivity Silicon With Ultralow Metallization Thicknesscitations
- 2016Comparison of structural, mechanical and corrosion properties of thin TiO<inf>2</inf>/graphene hybrid systems formed on Ti-Al-V alloys in biomedical applicationscitations
- 2015Comparison of mechanical and corrosion properties of graphene monolayer on Ti-Al-V and nanometric Nb2O5 layer on Ti-Al-V alloy for dental implants applicationscitations
- 2015The hybrid graphene multilayer system (graphene/SiN/graphene) coupled with titanium alloy (Ti6Al4V) - structural, mechanical and corrosion characterisationcitations
Places of action
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article
Technology and optimization of hafnium oxynitride (HfOxNy) thin-films formed by pulsed-DC reactive magnetron sputtering for MIS devices
Abstract
This study is devoted to the technology and optimization of pulsed-DC reactive magnetron sputtering of hafnium oxynitride (HfOxNy) thin-films. The fabrication process of HfOxNy films was optimized employing the Taguchi orthogonal tables approach leading to the material with possible best electrical parameters. During the optimization procedure, the parameters of dielectric films were monitored by means of electrical characterization of MIS structures with hafnium oxynitride as the gate-dielectric. The thermal stability of fabricated HfOxNy layers was also examined. The presented results have shown the improved electrical parameters of fabricated films after thermal treatment. Namely, we have observed beneficial flat-band voltage (Vfb) value, the disappearance of frequency dispersion of CV characteristics, reduced effective charge (Qeff/q), and interface traps (Dit) densities of examined MIS structures. However, the permittivity value is slightly lower as compared to reference samples. The superior stability of HfOxNy layers up to 800 °C was proved. Although the significant increase of crystalline phase in the layer bulk was observed, no deterioration of electrical properties or surface morphology has been noticed. The results presented in this study make the investigated HfOxNy fabricated using pulsed-DC reactive magnetron sputtering the possible candidate as a gate dielectric in MIS structures and devices.