| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Marie, Rodolphe Charly Willy
Technical University of Denmark
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (5/5 displayed)
- 2017Direct bonding of ALD Al2O3 to silicon nitride thin filmscitations
- 2014Injection molded pinched flow fractionation device for enrichment of somatic cells in cow milkcitations
- 2012All polymer, injection molded nanoslits, fabricated through two-level UV-LIGA processes
- 2012Fabrication of combined-scale nano- and microfluidic polymer systems using a multilevel dry etching, electroplating and molding processcitations
- 2002Adsorption kinetics and mechanical properties of thiol-modified DNA-oligos on gold investigated by microcantilever sensorscitations
Places of action
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article
Direct bonding of ALD Al2O3 to silicon nitride thin films
Abstract
Direct bonding is an advanced joining technique for bonding of silicon based surfaces at low temperature without any specific surface pretreatment. The main purpose of this work is to develop new techniques to enhance the fabrication process for nanofluidic systems for in situ transmission electron microscopy (TEM) by improving low temperature annealing bonding strength when using atomic layer deposition of aluminum oxide. We have investigated and characterized bonding of Al<sub>2</sub>O<sub>3</sub>-Si<sub>x</sub>N<sub>y</sub> (low stress silicon rich nitride) and Al<sub>2</sub>O<sub>3</sub>-Si<sub>3</sub>N<sub>4 </sub>(stoichiometric nitride) thin films annealed from room temperature up to 600 degrees C without pretreatment prior to the pre bonding. We find that bonding of Al<sub>2</sub>O<sub>3</sub>-Si<sub>x</sub>N<sub>y</sub> and Al<sub>2</sub>O<sub>3</sub>-Si<sub>3</sub>N<sub>4</sub> is favorable in a temperature range from room temperature to 600 °C. We report bonding strength of 1300±150 mJ/m<sup>2</sup> comparable to and in some case even higher than that of other materials Al<sub>2</sub>O<sub>3</sub> can be bonded to. Preliminary tests demonstrating a well-defined nanochannel system with-100 nm high channels successfully bonded and tests against leaks using optical fluorescence technique and transmission electron microscopy (TEM) characterization of liquid samples are also reported. Moreover, the current bonding method can be also used for further MEMS applications.