• Rolland, N.
• Kinkelin, Christophe
• Remondière, Vincent
• Ollier, Emmanuel E.
• Descouts, Brigitte
• Lefevre, Frédéric
• Ancey, Pascal
• Lhostis, Sandrine
• Soupremanien, Ulrich
• Kaplan, Yann
• Rolland, Paul-Alain
• Lips, S.
• Dijon, Jean
• Poche, Hélène Le
• Zegaoui, Malek

Abstract

As the power of electronic systems powers is increasing, thermal fluxes are getting higher, up to more than 100W/cm2 in more critical cases. They result in hot spots with various consequences, especially performance reduction and reliability issues. Most of the prior research has been focused on active liquid cooling and on reducing hot spots by the implementation of thermal interface materials (TIMs) and spreading solutions. The approach presented here is based on the implementation in silicon of nanocomposite structures including carbon nanotubes (CNTs) and phase change materials (PCMs).The simulation model presented here shows how the composite CNTs/PCM structure efficiently reduces the temperature increase at the silicon surface compared to the implementation of PCM only or thicker silicon. A fabrication process flow is presented with a special focus on the assembly of silicon top and bottom parts with CNTs. Process conditions are explored to insure mechanical adhesion and thermal contact quality. This thermal interposer concept provides a new solution for thermal management and reliability improvement of devices. It is of great interest for electronic and optical devices, MEMS and 3D integration.

Topics

• nanocomposite
• impedance spectroscopy
• surface
• Carbon
• phase
• nanotube
• simulation
• Silicon
• thermal ionisation mass spectrometry