| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Hueting, Raymond
University of Twente
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (11/11 displayed)
- 2024A Systematic Comparison Study of Different Bonding Technologies for Large Substrate Attachment of Power Electronics
- 2020Epitaxial growth of full range of compositions of (1 1 1) PbZr1- xTixO3 on GaNcitations
- 2015Electrostatic analysis of n-doped SrTiO3 metal-insulator-semiconductor systemscitations
- 2014Analysis of thin-film PZT/LNO stacks on an encapsulated TiN electrodecitations
- 2012Extraction of second order piezoelectric parameters in bulk acoustic wave resonatorscitations
- 2011On the rule of thumb for flipping the dispersion relation in BAW devicescitations
- 2011Exploring Capacitance-Voltage measurements to find the Piezoelectric Coefficient of Aluminum Nitridecitations
- 2010BaxSr1-xTi1.02O3 metal-insulator-metal capacitors on planarized alumina substratescitations
- 2008The trade-off between tuning ratio and quality factor of BaxSr1-xTiO3 MIM capacitors on alumina substrates
- 2007Separation of intrinsic dielectric and resistive electrode losses in ferroelectric capacitors at radio frequencies
- 2006Electrical characterization of thin film ferroelectric capacitors
Places of action
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article
Analysis of thin-film PZT/LNO stacks on an encapsulated TiN electrode
Abstract
We realized metal-ferroelectric-metal (MFM) capacitors comprising high-quality ferroelectric lead zirconate titanate (Pb(Zr0.52Ti0.48)O3 or PZT) thin films on an LaNiO3/poly-Si/titanium nitride (TiN)/SiO2 integrated on a 100 mm Si wafer. Promising effective piezoelectric coefficient and remnant polarization of 53 pm/V and 19.2 μC/cm2, respectively, are obtained for the 100 nm-PZT/20 nm-LNO stack. Further analysis of the samples indicates the presence of a passive layer, possibly near the Ti/PZT interface at the top electrode. A leakage current model has been used to explain the obtained current density–electric field curves. In this model, diffusion limited transport has been assumed in which the injection is interface-controlled. Based on the capacitance and the leakage current measurements, the thickness and dielectric constant values of the passive layer are estimated to be 2.1 nm and 23, respectively. The observed apparent low barrier height value of 0.32 eV is attributed to ferroelectric polarization related phenomena. A good agreement between measurement and leakage current model is obtained