| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Mantl, S.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (18/18 displayed)
- 2016Si–Ge–Sn alloys: From growth to applicationscitations
- 2016Low Temperature Deposition of High-k/Metal Gate Stacks on High-Sn Content (Si)GeSn-Alloyscitations
- 2015Ternary and quaternary Ni(Si)Ge(Sn) contact formation for highly strained Ge p- and n-MOSFETscitations
- 2015Optical Transitions in Direct-Bandgap Ge1-xSnx Alloyscitations
- 2015Optical Transitions in Direct-Bandgap Ge 1– x Sn x Alloyscitations
- 2014SiGeSn growth studies using reduced pressure chemical vapor deposition towards optoelectronic applicationscitations
- 2013Millisecond flash lamp annealing for LaLuO3 and LaScO 3 high-k dielectricscitations
- 2013Photoemission Spectroscopy Study of the Lanthanum Lutetium Oxide / Silicon interfacecitations
- 2011Atomic layer deposition of HfO2 and Al2O3 layers on 300 mm Si wafers for gate stack technologycitations
- 2011Silicon Nanowire Tunneling Field-Effect Transistor Arrays: Improving Subthreshold Performance Using Excimer Laser Annealingcitations
- 2009Si ion implantation for strain relaxation of pseudomorphic Si1-xGex/Si(100) heterostructurescitations
- 2007Characterization and electrical properties of high-k GdScO3 thin films grown by atomic layer depositioncitations
- 2007Effects of annealing on the electrical and interfacial properties of amorphous lanthanum scandate films prepared by molecular beam depositioncitations
- 2006Preparation and characterization of rare earth scandates as alternative gate oxide materialscitations
- 2004Nanopatterning of epitaxial CoSi2 using oxidation in a local stress field and fabrication of nanometer metal-oxide-semiconductor field-effect transistorscitations
- 2003Fabrication of Schottky barrier MOSFETs using self-assembly CoSi 2 nanopatterning and spacer gate technologiescitations
- 2002Epitaxial CoSi2-nanostructures : an approach to silicon nanoelectronicscitations
- 2002Epitaxial CoSi2-nanostructurescitations
Places of action
| Organizations | Location | People |
|---|
article
Millisecond flash lamp annealing for LaLuO3 and LaScO 3 high-k dielectrics
Abstract
<p>LaLuO<sub>3</sub> and LaScO<sub>3</sub> high-k layers were treated by flash lamp annealing (FLA) at temperatures between 1000 C and 1200 C for 3 or 20 ms. This procedure mimics the effect of an source/drain activation annealing by FLA on the electrical and microstructural properties of these alternative high-k dielectrics in a gate-first processing scheme. Related MOS capacitors with a TiN metal gate were processed in a gate-first like processing scheme. It is shown that 3 nm thick oxide layers resist crystallization even at 1200 C for 3 ms, while nanocrystallites are formed in thicker layers. The influence of the FLA treatment on capacitance-voltage (C-V) and current-voltage (I-V) characteristics are investigated. From these measurements, the effects on the relative dielectric constant (k), the fixed oxide charge density (Q<sub>ox</sub>) as well as the leakage current through the insulators are deduced.</p>