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Chong, Harold
University of Southampton
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (10/10 displayed)
- 2020Laser-driven phase segregation and tailoring of compositionally graded microstructures in Si-Ge nanoscale thin filmscitations
- 2020Laser processed semiconductors for integrated photonic devices
- 2020Laser-written silicon-germanium alloy microstructures with tunable compositionally graded profiles
- 2020Multi-stack insulator to minimise threshold voltage drift in ZnO FET sensors operating in ionic solutionscitations
- 2019Laser processing of amorphous semiconductors on planar substrates for photonic and optoelectronic applications
- 2017Laser annealing of low temperature deposited silicon waveguidescitations
- 2016Large-scale nanoelectromechanical switches based on directly deposited nanocrystalline graphene on insulating substratescitations
- 2015Characterisation of nanographite for MEMS resonators
- 2015A silicon/lithium niobate hybrid photonic material platform produced by laser processing
- 2012Remote plasma enhanced atomic layer deposition of ZnO for thin film electronic applicationscitations
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article
Remote plasma enhanced atomic layer deposition of ZnO for thin film electronic applications
Abstract
This paper describes a systematic approach to analyze the simultaneous impact of various reactant plasma parameters of remote plasma enhanced ALD (PEALD) on the ZnO thin film properties. Particular emphasis is placed on the film stoichiometry which affects the electrical properties of the thin film. Design of Experiment (DOE) is used to study the impact of the oxygen plasma parameters such as the RF power, pressure and plasma time to realize semiconductor quality of ZnO thin film. Based on the optimized plasma condition, staggered bottom-gate TFTs were fabricated and its electrical characteristics were measured.