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Sun, Kai
University of Southampton
in Cooperation with on an Cooperation-Score of 37%
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Publications (7/7 displayed)
- 2022VO 2 metasurface smart thermal emitter with high visual transparency for passive radiative cooling regulation in space and terrestrial applicationscitations
- 2022Room temperature phase transition of W-doped VO 2 by atomic layer deposition on 200 mm Si wafers and flexible substratescitations
- 2022Room temperature phase transition of W-doped VO2 by atomic layer deposition on 200 mm Si wafers and flexible substratescitations
- 2022VO2metasurface smart thermal emitter with high visual transparency for passive radiative cooling regulation in space and terrestrial applicationscitations
- 2020Multi-stack insulator to minimise threshold voltage drift in ZnO FET sensors operating in ionic solutionscitations
- 2012Remote plasma enhanced atomic layer deposition of ZnO for thin film electronic applicationscitations
- 2012Effect of an oxide cap layer and fluorine implantation on the metal-induced lateral crystallization of amorphous siliconcitations
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article
Remote plasma enhanced atomic layer deposition of ZnO for thin film electronic applications
Abstract
This paper describes a systematic approach to analyze the simultaneous impact of various reactant plasma parameters of remote plasma enhanced ALD (PEALD) on the ZnO thin film properties. Particular emphasis is placed on the film stoichiometry which affects the electrical properties of the thin film. Design of Experiment (DOE) is used to study the impact of the oxygen plasma parameters such as the RF power, pressure and plasma time to realize semiconductor quality of ZnO thin film. Based on the optimized plasma condition, staggered bottom-gate TFTs were fabricated and its electrical characteristics were measured.