| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Marksteiner, Markus
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (4/4 displayed)
- 2012Ion beam irradiation of cuprate high-temperature superconductors: Systematic modification of the electrical properties and fabrication of nanopatternscitations
- 2009Masked ion beam irradiation of high-temperature superconductors: patterning of nano-size regions with high point-defect densitycitations
- 2006Ion-beam modification of high-temperature superconductor thin films for the fabrication of superconductive nanodevices
- 2006Ion-beam direct-structuring of high-temperature superconductorscitations
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article
Ion-beam direct-structuring of high-temperature superconductors
Abstract
A novel method allows for a direct modification of the electric properties of high-temperature superconductors (HTS) and for patterning of devices into thin films of HTS. A low-divergence beam of light ions is directed at a thin film of HTS through a mask placed at some distance from the surface of the material. It converts the illuminated areas of the film from superconducting to semiconducting and even insulating in a single process. Computer simulations of the ion-target interactions and experimental investigations on 100-nm thick films of YBa2Cu3O7 by X-ray diffraction, electrical resistivity and Hall effect measurements after cumulative irradiation are reported. A central result is that 75 keV He+ ions can penetrate through thin films of HTS without implantation effects, create point defects without destruction of the main building blocks of the crystal structure and convert a HTS to an insulating material with technically feasible ion doses of a few 1015 cm-2. Π2006 Elsevier B.V. All rights reserved.