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Sugii, N.
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article
Effects of low temperature annealing on the ultrathin La2O 3 gate dielectric; Comparison of post deposition annealing and post metallization annealing
Abstract
This work reports the effects of low-temperature post-deposition annealing (PDA) and post-metallization annealing (PMA) on the electrical properties of ultrathin (with EOT ranging from 1.29 nm to 2.33 nm) La<sub>2</sub>O<sub>3</sub> gate dielectric films. We found that positive charges were generated during the PDA as evidenced by the negative flat-band voltage (V<sub>FB</sub>) shift. Forming of La-silicate interface layer and a reduction in the channel mobility are found for the PDA samples at temperature higher than 300°C. Better electrical characteristics were achieved by the PMA. The PMA sample has a peak channel mobility of 319 cm<sup>2</sup> /Vs. © 2005 Elsevier B.V. All rights reserved.