Materials Map

Discover the materials research landscape. Find experts, partners, networks.

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The Materials Map is an open tool for improving networking and interdisciplinary exchange within materials research. It enables cross-database search for cooperation and network partners and discovering of the research landscape.

The dashboard provides detailed information about the selected scientist, e.g. publications. The dashboard can be filtered and shows the relationship to co-authors in different diagrams. In addition, a link is provided to find contact information.

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Materials Map under construction

The Materials Map is still under development. In its current state, it is only based on one single data source and, thus, incomplete and contains duplicates. We are working on incorporating new open data sources like ORCID to improve the quality and the timeliness of our data. We will update Materials Map as soon as possible and kindly ask for your patience.

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1.080 Topics available

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977 Locations available

693.932 PEOPLE
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Naji, M.
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Bollani, M.

  • Google
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in Cooperation with on an Cooperation-Score of 37%

Topics

Publications (16/16 displayed)

  • 2022Photon management in SiO2-SnO2:Yb3+ hybrid 1D microcavity3citations
  • 2021Assessment of SnO2-nanocrystal-based luminescent glass-ceramic waveguides for integrated photonics20citations
  • 2021Engineering of the spin on dopant process on silicon on insulator substrate18citations
  • 2021Large-area nanocrystalline caesium lead chloride thin films: A focus on the exciton recombination dynamics12citations
  • 2015SiGe nano-stressors for Ge strain-engineeringcitations
  • 2015Three-dimensional fabrication of free-standing epitaxial semiconductor nanostructures obtained by focused ion beam7citations
  • 2015Micro and nanofabrication of SiGe/Ge bridges and membranes by wet-anisotropic etching7citations
  • 2014Monitoring the kinetic evolution of self-assembled SiGe islands grown by Ge surface thermal diffusion from a local source5citations
  • 2013Strain-induced generation of silicon nanopillars8citations
  • 2013Ordered arrays of Si and Ge nanocrystals via dewetting of pre-patterned thin films31citations
  • 2012Design of free patterns of nanocrystals with ad hoc features via templated dewetting35citations
  • 2009Raman spectroscopy for the analysis of temperature-dependent plastic relaxation of SiGe layerscitations
  • 2004High mobility SiGe heterostructures fabricated by low-energy plasma-enhanced chemical vapor deposition25citations
  • 2001Experimental evidence and computational analysis of the electronic density modulation induced by gaseous molecules at Si(001) surfaces upon self-assembling organic monolayer16citations
  • 2000Final evidence for H termination of HF-treated Si surfaces: a comparative study by high-energy and vibrational spectroscopiescitations
  • 2000Chemically induced disordering of Si (100) surfaces upon SC1/SC2 etching analysed by high-resolution transmission electron microscopy6citations

Places of action

Chart of shared publication
Szczurek, A.
1 / 2 shared
Bursi, O.
1 / 1 shared
Gluchowski, P.
2 / 4 shared
N., Conti G.
1 / 2 shared
Scotognella, F.
3 / 9 shared
Lukowiak, A.
2 / 12 shared
Zonta, D.
1 / 5 shared
Varas, S.
2 / 7 shared
Fernandez, J.
1 / 12 shared
Carlotto, A.
1 / 1 shared
Cian, A.
1 / 5 shared
Balda, R.
1 / 11 shared
L., Tran T. N.
2 / 3 shared
Ferrari, M.
2 / 43 shared
Iacob, E.
2 / 4 shared
Ischia, G.
2 / 7 shared
Chiasera, A.
2 / 11 shared
C., Righini G.
2 / 8 shared
Berneschi, S.
1 / 11 shared
Sayginer, O.
1 / 1 shared
Chiappini, A.
1 / 12 shared
Armellini, C.
1 / 16 shared
Carpentiero, A.
1 / 4 shared
Tavani, G.
1 / 1 shared
Arduca, E.
1 / 1 shared
Barri, C.
2 / 2 shared
Abbarchi, M.
1 / 13 shared
Frigerio, J.
3 / 8 shared
Mafakheri, E.
1 / 1 shared
Chrastina, D.
5 / 13 shared
Fagiani, L.
1 / 1 shared
Fedorov, A.
1 / 15 shared
Lodari, M.
3 / 7 shared
Perego, M.
1 / 13 shared
Barzaghi, A.
1 / 1 shared
Falsini, N.
1 / 3 shared
Caporali, S.
1 / 6 shared
Scardi, P.
1 / 10 shared
Ristori, A.
1 / 1 shared
Roini, G.
1 / 1 shared
Vinattieri, A.
1 / 6 shared
Biccari, F.
1 / 1 shared
Calisi, N.
1 / 7 shared
Scopece, Daniele
1 / 5 shared
Borriello, M.
1 / 1 shared
Montalenti, Francesco Cimbro Mattia
1 / 11 shared
Mondiali, V.
2 / 2 shared
Gagliano, L.
1 / 2 shared
Pezzoli, Fabio
2 / 19 shared
Rossetto, L.
1 / 2 shared
Barget, Michael Reiner
2 / 3 shared
Bonera, Emiliano
4 / 14 shared
Giovine, E.
1 / 2 shared
Melli, M.
1 / 1 shared
Aloni, S.
1 / 1 shared
Ortolani, M.
1 / 6 shared
Notargiacomo, A.
1 / 8 shared
Weber-Bargioni, A.
1 / 7 shared
Sassolini, S.
1 / 1 shared
Sakat, Emilie
1 / 9 shared
Biagioni, P.
1 / 7 shared
Cabrini, S.
1 / 1 shared
Giliberti, V.
1 / 2 shared
Baldassarre, L.
1 / 6 shared
Di Gaspare, A.
1 / 1 shared
Isella, G.
4 / 32 shared
Capellini, G.
1 / 13 shared
Tagliaferri, A.
1 / 2 shared
Zani, M.
1 / 3 shared
Vanacore, G.
1 / 2 shared
Nicotra, G.
2 / 14 shared
Osmond, J.
2 / 3 shared
Narducci, Dario
2 / 19 shared
Spinella, C.
1 / 7 shared
Favre, Luc
2 / 25 shared
Sudraud, P.
2 / 4 shared
Sordan, R.
2 / 2 shared
Delobbe, A.
2 / 3 shared
Aouassa, Mansour
2 / 6 shared
Berbezier, Isabelle
2 / 26 shared
Ronda, A.
2 / 11 shared
Guzzi, Mario
1 / 7 shared
Von Kanel, H.
2 / 10 shared
Grilli, Emanuele Enrico
1 / 12 shared
Sanguinetti, Stefano
1 / 10 shared
Hague, James
1 / 5 shared
Roessner, B.
1 / 1 shared
Narducci, D.
2 / 10 shared
Piagge, R.
1 / 1 shared
Charai, A.
3 / 5 shared
Portail, M.
1 / 5 shared
Layet, J.
1 / 1 shared
Fares, L.
1 / 1 shared
Chart of publication period
2022
2021
2015
2014
2013
2012
2009
2004
2001
2000

Co-Authors (by relevance)

  • Szczurek, A.
  • Bursi, O.
  • Gluchowski, P.
  • N., Conti G.
  • Scotognella, F.
  • Lukowiak, A.
  • Zonta, D.
  • Varas, S.
  • Fernandez, J.
  • Carlotto, A.
  • Cian, A.
  • Balda, R.
  • L., Tran T. N.
  • Ferrari, M.
  • Iacob, E.
  • Ischia, G.
  • Chiasera, A.
  • C., Righini G.
  • Berneschi, S.
  • Sayginer, O.
  • Chiappini, A.
  • Armellini, C.
  • Carpentiero, A.
  • Tavani, G.
  • Arduca, E.
  • Barri, C.
  • Abbarchi, M.
  • Frigerio, J.
  • Mafakheri, E.
  • Chrastina, D.
  • Fagiani, L.
  • Fedorov, A.
  • Lodari, M.
  • Perego, M.
  • Barzaghi, A.
  • Falsini, N.
  • Caporali, S.
  • Scardi, P.
  • Ristori, A.
  • Roini, G.
  • Vinattieri, A.
  • Biccari, F.
  • Calisi, N.
  • Scopece, Daniele
  • Borriello, M.
  • Montalenti, Francesco Cimbro Mattia
  • Mondiali, V.
  • Gagliano, L.
  • Pezzoli, Fabio
  • Rossetto, L.
  • Barget, Michael Reiner
  • Bonera, Emiliano
  • Giovine, E.
  • Melli, M.
  • Aloni, S.
  • Ortolani, M.
  • Notargiacomo, A.
  • Weber-Bargioni, A.
  • Sassolini, S.
  • Sakat, Emilie
  • Biagioni, P.
  • Cabrini, S.
  • Giliberti, V.
  • Baldassarre, L.
  • Di Gaspare, A.
  • Isella, G.
  • Capellini, G.
  • Tagliaferri, A.
  • Zani, M.
  • Vanacore, G.
  • Nicotra, G.
  • Osmond, J.
  • Narducci, Dario
  • Spinella, C.
  • Favre, Luc
  • Sudraud, P.
  • Sordan, R.
  • Delobbe, A.
  • Aouassa, Mansour
  • Berbezier, Isabelle
  • Ronda, A.
  • Guzzi, Mario
  • Von Kanel, H.
  • Grilli, Emanuele Enrico
  • Sanguinetti, Stefano
  • Hague, James
  • Roessner, B.
  • Narducci, D.
  • Piagge, R.
  • Charai, A.
  • Portail, M.
  • Layet, J.
  • Fares, L.
OrganizationsLocationPeople

article

High mobility SiGe heterostructures fabricated by low-energy plasma-enhanced chemical vapor deposition

  • Bollani, M.
  • Von Kanel, H.
  • Chrastina, D.
  • Hague, James
  • Isella, G.
  • Roessner, B.
Abstract

We present results obtained on modulation-doped quantum wells with compressively strained Ge channels. The heterostructures have been grown by low-energy plasma-enhanced chemical vapor deposition (LEPECVD). Magnetotransport measurements were carried out both on van der Pauw squares and lithographically defined Hall bars. The 2 K hole mobility increases with sheet density, and exceeds 10<sup>5</sup> cm<sup>2</sup> V<sup>−1</sup> s<sup>−1</sup> below 40 K for carrier densities above 8 × 10<sup>11</sup> cm<sup>−2</sup>. It is dominated by remote impurity scattering, according to linear transport theory calculations. The same conclusion follows from the Dingle ratios of 5–10 derived from the low-field longitudinal magnetoresistance. Room-temperature channel mobilities were extracted from the magnetic field dependence of longitudinal and transverse magnetoresistance by means of mobility spectrum analysis. We obtained 2940 cm<sup>2</sup> V<sup>−1</sup> s<sup>−1</sup> at a sheet hole density of 5.7 × 10<sup>11</sup> cm<sup>−2</sup>.

Topics
  • density
  • impedance spectroscopy
  • mobility
  • theory
  • chemical vapor deposition