| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Paetzold, Ulrich Wilhelm
Karlsruhe Institute of Technology
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (19/19 displayed)
- 2024Hybrid Two‐Step Inkjet‐Printed Perovskite Solar Cellscitations
- 2024Modeling and Fundamental Dynamics of Vacuum, Gas, and Antisolvent Quenching for Scalable Perovskite Processescitations
- 2024Energy Yield Modeling of Perovskite–Silicon Tandem Photovoltaics: Degradation and Total Lifetime Energy Yieldcitations
- 2023Bright circularly polarized photoluminescence in chiral layered hybrid lead-halide perovskitescitations
- 2023Evaporated Self‐Assembled Monolayer Hole Transport Layers: Lossless Interfaces in <i>p‐i‐n</i> Perovskite Solar Cellscitations
- 2023Decoupling Bimolecular Recombination Mechanisms in Perovskite Thin Films Using Photoluminescence Quantum Yield
- 2023Surface Saturation Current Densities of Perovskite Thin Films from Suns-Photoluminescence Quantum Yield Measurements
- 2023Intensity Dependent Photoluminescence Imaging for In‐Line Quality Control of Perovskite Thin Film Processingcitations
- 2022Energy Yield Modeling of Bifacial All‐Perovskite Two‐Terminal Tandem Photovoltaicscitations
- 2022Mitigation of Open‐Circuit Voltage Losses in Perovskite Solar Cells Processed over Micrometer‐Sized‐Textured Si Substratescitations
- 2021A Self‐Assembly Method for Tunable and Scalable Nano‐Stamps: A Versatile Approach for Imprinting Nanostructurescitations
- 2021Analytical Study of Solution-Processed Tin Oxide as Electron Transport Layer in Printed Perovskite Solar Cellscitations
- 2021From Groundwork to Efficient Solar Cells: On the Importance of the Substrate Material in Co‐Evaporated Perovskite Solar Cellscitations
- 2021Exciton versus free carrier emission: Implications for photoluminescence efficiency and amplified spontaneous emission thresholds in quasi-2D and 3D perovskitescitations
- 2020Chemical vapor deposited polymer layer for efficient passivation of planar perovskite solar cellscitations
- 2019Continuous wave amplified spontaneous emission in phase-stable lead halide perovskitescitations
- 2019Vacuum‐Assisted Growth of Low‐Bandgap Thin Films (FA$_{0.8}$MA$_{0.2}$Sn$_{0.5}$Pb$_{0.5}$I$_{3}$) for All‐Perovskite Tandem Solar Cellscitations
- 2019Inkjet‐Printed Micrometer‐Thick Perovskite Solar Cells with Large Columnar Grainscitations
- 2017All-Angle Invisibility Cloaking of Contact Fingers on Solar Cells by Refractive Free-Form Surfacescitations
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article
Exciton versus free carrier emission: Implications for photoluminescence efficiency and amplified spontaneous emission thresholds in quasi-2D and 3D perovskites
Abstract
Among perovskite semiconductors, quasi-two-dimensional (2D) materials are attractive for the pursuit of electrically driven lasing given their excellent performance in light-emitting diodes (LEDs) and their recent success in continuous-wave optically pumped lasing. We investigate the spontaneous photoluminescence emission and amplified spontaneous emission (ASE) of a series of quasi-2D emitters, and their directly analogous 3D materials formed by removing the 2D organic spacer by annealing. Although the PL photoluminescence (PL) (at low optical excitation power) from quasi-2D films with high 2D spacer fractions can be much brighter than that from their 3D counterparts, the ASE thresholds of these quasi-2D materials tend to be higher. This counter-intuitive behavior is investigated through time-resolved photophysical studies, which reveal the emission in the high-spacer-content quasi-2D perovskite can be exclusively excitonic, and the exciton–exciton annihilation of quasi-2D perovskite starts to take over the exciton dynamics at a low exciton density (<10$^{16}$ cm$^{-3}$). To lower ASE thresholds in quasi-2D materials it is necessary to increase the volume fraction of thick quantum wells, which we achieve by decreasing the spacer content or by utilizing 1-naphthylmethylamine (NMA) linkers. The increase of the volume fraction of thick quantum wells correlates with an increased contribution of free carrier recombination to the emission process of the quasi-2D materials. These results suggest that material development of quasi-2D materials for gain applications should target fast free charge carrier recombination rates by engineering the well thickness and size and not maximum photoluminescence quantum yields under low power excitation.