• Pols, Mike
• Tao, Shuxia
• Mirza, Adeem Saeed
• Brocks, Geert H. L. A.
• Morales-Masis, Monica
• Soltanpoor, Wiria

Abstract

CuI has been the best-known p-type transparent conductor (TC) for years, yet its conductivity still lags behind n-type TCs. Herein, we demonstrate S-doped CuI films via pulsed laser deposition and provide an in-depth defect analysis to describe its enhanced conductivity. Combining compositional and optoelectronic characterizations of the films, we show that 3 atom % S incorporation in CuI leads to an increase in hole carrier density from ∼8 × 1019 to ∼9 × 1020 cm−3, resulting in a conductivity boost from 78 to 435 S cm−1 while maintaining >75% transparency in the visible spectrum. The increase in carrier density is linked to the formation of a CuxS amorphous phase at grain boundaries and copper-vacancy-rich phases intragrain, the latter suggested by defect calculations. The high conductivities of the S:CuI films validate the recently reported high figure of merit and motivate further exploration of dopants and alloy strategies with CuI to achieve high-performing p-type TCs.

Topics

• density
• impedance spectroscopy
• amorphous
• grain
• phase
• semiconductor
• liquid-assisted grinding
• physical vapor deposition
• copper
• pulsed laser deposition
• vacancy