| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Hourahine, Benjamin
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Topics
Publications (14/14 displayed)
- 2020Luminescence behavior of semipolar (10-11) InGaN/GaN "bow-tie" structures on patterned Si substratescitations
- 2019Collapsed carbon nanotubes : from nano to mesoscale via density functional theory-based tight-binding objective molecular modelingcitations
- 2019Collapsed carbon nanotubescitations
- 2018Dislocation contrast in electron channelling contrast images as projections of strain-like componentscitations
- 2017Coherent control of plasmons in nanoparticles with nonlocal responsecitations
- 2016Reprint of
- 2016Electron channelling contrast imaging for III-nitride thin film structurescitations
- 2013Electron channeling contrast imaging studies of nonpolar nitrides using a scanning electron microscopecitations
- 2012Imaging and identifying defects in nitride semiconductor thin films using a scanning electron microscopecitations
- 2010Theoretical modelling of rare Earth dopants in GaNcitations
- 2009Luminescence of Eu ions in AlxGa1-xN across the entire alloy composition rangecitations
- 2007Efficient tight-binding approach for the study of strongly correlated systemscitations
- 2006Rare earth doped III-nitrides for optoelectronicscitations
- 2006Hydrogen molecules and platelets in germaniumcitations
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article
Dislocation contrast in electron channelling contrast images as projections of strain-like components
Abstract
The forward scattering geometry in the scanning electron microscope enables the acquisition of electron channelling contrast imaging (ECCI) micrographs. These images contain diffraction information from the beam of electrons “channelling in” into the sample. Since small, localised strains strongly affect the electron diffraction, defects which introduce lattice displacement in the region of the surface the electron beam is interacting with will be revealed as district variation in backscattered electron intensity. By acquiring multiple images from the same area in different diffraction conditions and comparing them against modelled predictions of defect strain sampled by diffraction, it is possible to characterise these defects. Here we discuss the relation between the elastic strain introduced by a threading dislocation intersecting the surface and the contrast features observed in the electron channelling contrast image of that region. Preliminary simulated channelling contrast images are shown for dislocations with known line direction and Burgers vectors using a two-beam dynamical diffraction model. These are demonstrated to be in qualitative agreement with measured images of dislocated polar wurtzite GaN acquired with two different diffraction condition.