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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Pong, W. F.
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Publications (4/4 displayed)
- 2022Possible Ferro-electro-magnetic performance of “reduced graphene oxide” deposited on “ZnO-nanorod (NR) decorated with nanocrystalline Au particles"citations
- 2005Electronic properties of a-CNx thin films : An x-ray-absorption and photoemission spectroscopy studycitations
- 2005Electronic structure and photoluminescence study of silicon doped diamond like carbon (Si:DLC) thin filmscitations
- 2004Electronic structure and bonding properties of Si-doped hydrogenated amorphous carbon filmscitations
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article
Electronic structure and photoluminescence study of silicon doped diamond like carbon (Si:DLC) thin films
Abstract
We have investigated the electronic and bonding structure using Fourier-transform infra-red (FT-IR) spectra and studied photoluminescence (PL) from micro-Raman spectra analysis of a-C:H:Si (Si:DLC) thin films deposited by plasma enhanced chemical vapour deposition (PECVD) method. Tetramethylsilane [Si(CH3)4, TMS] vapour was used as Silicon precursor and a bias voltage of 400 V was applied during deposition. It is observed from FT-IR spectra that with increasing TMS flow rate, the intensity of Si‐Hn and C‐Hn modes is increased significantly. PL study indicates that the PL is increased and that the PL peak position is shifted towards lower energy when the TMS flow rate increases gradually during deposition. # 2005 Elsevier Ltd. All rights reserved.