| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Schwarz, Sabine
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (8/8 displayed)
- 2024Solid lubrication performance of hybrid Ti3C2Tx/MoS2 coatingscitations
- 2023Corrosion of 1.4016 Ferritic Steel by Urea at High Temperature
- 2022Interfacial adhesion strength of III-N heterostructurescitations
- 2022Characterization of an Al-Cu-Mg-Zn multi principal element alloy by experimental and computational screening methods
- 2021Mechanistic in situ insights into the formation, structural and catalytic aspects of the La2NiO4 intermediate phase in the dry reforming of methane over Ni-based perovskite catalystscitations
- 2019Structure and properties of Ta/Al/Ta and Ti/Al/Ti/Au multilayer metal stacks formed as ohmic contacts on n-GaNcitations
- 2019Promotion of La(Cu0.7Mn0.3)0.98M0.02O3−δ (M = Pd, Pt, Ru and Rh) perovskite catalysts by noble metals for the reduction of NO by COcitations
- 2017Quantitative prediction of the mechanical properties of precipitation hardened alloys with a special application to Al-Mg-Si
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article
Interfacial adhesion strength of III-N heterostructures
Abstract
Wide bandgap semiconductors such as group III-nitrides and SiC are considered as key materials for the fabrication of smaller, more reliable and efficient power electronics. Fabrication of robust and durable power devices requires an optimized design based on the understanding of the interfacial adhesion properties of the constituent thin-film heterostructures. In this study, the adhesion properties of GaN/AlN layers grown on Si substrates were investigated. Particularly, the influence of the AlN buffer layers, necessary for GaN growth on Si, on the delamination response was determined. The interfacial adhesion strength was obtained using cross-sectional nanoindentation (CSN) and four-point bending (4PB) tests. Analytical models based on beam- and elastic plate theory which were applied respectively to calculate the interfacial fracture energy (Gic) for both methods are found to be in good agreement provided the loading conditions are similar. Detailed transmission and scanning electron microscopy investigations prior and subsequent to delamination reveal the microstructural details of the relevant interfaces and provide insights into the encountered mechanisms of interfacial failure. Finally, the probability of delamination along the weakest interface is discussed based on a fracture mechanics model.