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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Kristensen, Peter Kjær
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (14/14 displayed)
- 2024Metal-organic framework-intercalated graphene oxide nanofiltration membranes for enhanced treatment of wastewater effluentscitations
- 2024Metal-organic framework-intercalated graphene oxide nanofiltration membranes for enhanced treatment of wastewater effluentscitations
- 2023Magnetron Sputter Deposition of Nanostructured AlN Thin Filmscitations
- 2022Interfacial adhesion strength of III-N heterostructurescitations
- 2018Thermo-mechanically induced texture evolution and micro-structural change of aluminum metallizationcitations
- 2018Comparative study of Al metallization degradation in power diodes under passive and active thermal cyclingcitations
- 2018Optical characterization of SiC films grown on Si(111)
- 2018Optical characterization of SiC films grown on Si(111)
- 2018Low temperature transient liquid phase bonded Cu-Sn-Mo and Cu-Sn-Ag-Mo interconnectscitations
- 2016Mechanisms of metallization degradation in high power diodescitations
- 2015Effects of thermal cycling on aluminum metallization of power diodescitations
- 2015Nonfouling tunable βCD dextran polymer films for protein applicationscitations
- 2014Deposition of thin ultrafiltration membranes on commercial SiC microfiltration tubescitations
- 2013Influence of Two Compatibilizers on Clay/PP Nanocomposites Propertiescitations
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article
Interfacial adhesion strength of III-N heterostructures
Abstract
Wide bandgap semiconductors such as group III-nitrides and SiC are considered as key materials for the fabrication of smaller, more reliable and efficient power electronics. Fabrication of robust and durable power devices requires an optimized design based on the understanding of the interfacial adhesion properties of the constituent thin-film heterostructures. In this study, the adhesion properties of GaN/AlN layers grown on Si substrates were investigated. Particularly, the influence of the AlN buffer layers, necessary for GaN growth on Si, on the delamination response was determined. The interfacial adhesion strength was obtained using cross-sectional nanoindentation (CSN) and four-point bending (4PB) tests. Analytical models based on beam- and elastic plate theory which were applied respectively to calculate the interfacial fracture energy (Gic) for both methods are found to be in good agreement provided the loading conditions are similar. Detailed transmission and scanning electron microscopy investigations prior and subsequent to delamination reveal the microstructural details of the relevant interfaces and provide insights into the encountered mechanisms of interfacial failure. Finally, the probability of delamination along the weakest interface is discussed based on a fracture mechanics model.