| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Farhad, Dr. Syed Farid Uddin
in Cooperation with on an Cooperation-Score of 37%
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Publications (5/5 displayed)
- 2024Conformal zinc sulfide coating of vertically aligned ZnO nanorods by two-step hydrothermal synthesis on wide bandgap seed layers for lead-free perovskite solar cellscitations
- 2023Fabrication and Characterization of Graphene-Barium Titanate-Graphene Layered Capacitors by Spin Coating at Low Processing Temperaturescitations
- 2021Effects of withdrawal speed on the structural, morphological, electrical, and optical properties of CuO thin films synthesized by dip-coating for CO2 gas sensing
- 2021The effect of substrate temperature and oxygen partial pressure on the properties of nanocrystalline copper oxide thin films grown by pulsed laser deposition
- 2020Pulsed laser deposition of single phase n- and p-type Cu2O thin films with low resistivitycitations
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article
Pulsed laser deposition of single phase n- and p-type Cu2O thin films with low resistivity
Abstract
Low resistivity (ρ~3-24 mΩ.cm) with tunable n- and p-type single phase Cu2O thin films have been grown by pulsed laser deposition at 25-200 0C by varying the background oxygen partial pressure (O2pp). Capacitance data obtained by electrochemical impedance spectroscopy was used to determine the conductivity (n- or p-type), carrier density, and flat band potentials for samples grown on indium tin oxide (ITO) at 25 0C. The Hall mobility (µH) of the n- and p-type Cu2O was estimated to be ~ 0.85 cm 2.V-1-1 and ~ 4.78 cm 2.V-1s-1 respectively for samples grown on quartz substrate at 25 0C. An elevated substrate temperature ~ 200 0C with O2pp = 2 - 3 mTorr yielded p-type Cu2O films with six orders of magnitude higher resistivities in the range, ρ ~ 9 - 49 kΩ.cm and mobilities in the range, µH ~13.5 - 22.2 cm 2.V-1s-1. UV-Vis-NIR diffuse reflectance spectroscopy showed optical bandgaps of Cu2O films in the range of 1.76 to 2.15 eV depending on O2pp. Thin films grown at oxygen rich conditions O2pp ≥ 7 mTorr yielded mixed phase copper oxide irrespective of the substrate temperatures and upon air annealing at 550 0C for 1 hour completely converted to CuO phase with n-type semiconducting properties (ρ~12 Ω.cm, µH ~1.50 cm2V-1s-1). The as-grown p- and n-type Cu2O showed rectification and a photovoltaic response in solid junctions with n-ZnO and p-Si electrodes respectively. Our findings may create new opportunities for devising Cu2O based junctions requiring low process temperatures.