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Liu, Yinong
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Topics
Publications (35/35 displayed)
- 2022Pullout behaviour of shape memory alloy fibres in self-compacting concrete and its relation to fibre surface microtopography in comparison to steel fibrescitations
- 2019Nonuniform transformation behaviour of NiTi in a discrete geometrical gradient designcitations
- 2019Modelling and experimental investigation of geometrically graded shape memory alloys with parallel design configurationcitations
- 2018Effect of thermal annealing on stress relaxation and crystallisation of ion beam sputtered amorphous Si1-xGex thin filmscitations
- 2017Functionally graded shape memory alloyscitations
- 2017Experiments on deformation behaviour of functionally graded NiTi structurescitations
- 2016Investigation of Thermal Expansion Effects on Si-Based MEMS Structurescitations
- 2014Pseudoelastic behaviour of perforated NiTi shape memory plates under tensioncitations
- 2013Finite element computational modelling and experimental investigation of perforated NiTi plates under tensioncitations
- 2013Hystoelastic deformation behaviour of geometrically graded NiTi shape memory alloyscitations
- 2012Mechanical behaviour of architectured NiTi materials in complex loading
- 2011Assessment of tension-compression asymmetry of NiTi using circular bulge testing of thin platescitations
- 2011Modélisation numérique EF du comportement mécanique superélastique de plaques fines planes trouées en NiTi
- 2011Thermally induced damages of PECVD SiNx thin filmscitations
- 2011Etude expérimentale du comportement d'une tôle perforée aléatoirement en NiTi superélastique
- 2009Roundrobin SMA modelingcitations
- 2009Elastohysteresis : un modèle 3D phénoménologique précis pour le comportement superélastique d’Alliage à Mémoire de Forme sous chargements complexes
- 2008Gradient anneal of functionally graded NiTicitations
- 2008Effect of annealing on deformation-induced martensite stabilisation of NiTicitations
- 2008Effect of pseudoelastic cycling on the Clausius-Clapeyron relation for stress-induced martensitic transformation in NiTicitations
- 2007Poisson's Ratio of Low-Temperature PECVD Silicon Nitride Thin Filmscitations
- 2007Design of functionally graded NiTi by heat treatmentcitations
- 2007Process condition dependence of mechanical and physical properties of silicon nitride thin filmscitations
- 2006Hysteretic Behaviour of Ferroelasticity of NiTi in Shearcitations
- 2006Thermal Stability of PECVD SiN/sub x/ Filmscitations
- 2006Influence of Thermomechanical Processing on the Superelastic Properties of a Ni-Rich Nitinol Shape Memory Alloycitations
- 2006Effect of oxidation on the chemical bonding structure of PECVD SiN thin filmscitations
- 2005Characterization of Mechanical Properties of Silicon Nitride Thin Films for MEMS Devices by Nanoindentation
- 2005Effects of deposition temperature on the mechanical and physical properties of silicon nitride thin filmscitations
- 2005On the origin of Luders-like deformation of NiTi shape memory alloyscitations
- 2005Determination of mechanical properties of PECVD silicon nitride thin films for tunable MEMS Fabry-Perot optical filterscitations
- 2005Thermal processing of polycrystalline NiTi shape memory alloyscitations
- 2004Mechanistic simulation of thermomechanical behaviour of thermoelastic martensitic transformations in polycrystalline shape memory alloyscitations
- 2004Hysteretic behaviour of a Cu-Zn-Al single crystal during superelastic shear deformationcitations
- 2004Evaluation Of Elastic Modulus And Stress Gradient Of PECVD Silicon Nitride Thin Films
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article
Effect of thermal annealing on stress relaxation and crystallisation of ion beam sputtered amorphous Si1-xGex thin films
Abstract
<p>Si<sub>1-x</sub>Ge<sub>x</sub> (0≤x≤1) thin films were deposited by means of biased target ion beam sputtering at a low substrate temperature near 100 °C inside a vacuum chamber. The as-deposited films were all found to be amorphous and to be compressively stressed, and the magnitude of the compressive stress was found to decrease with increasing Ge content. Heat treatment for 30 min under vacuum conditions in the range from 100 °C to 800 °C was found to relax the compressive stress and to eventually cause crystallisation of the films at higher temperatures. The temperature required to achieve full stress relaxation was found to decrease with increasing Ge content, and to be well below that for film crystallisation. Annealing at temperatures above the crystallisation temperature caused physical damage to films containing >50 at.% Ge. Films with <50 at.% Ge showed no damage after annealing up to 800 °C.</p>