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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Kruszewski, Mirosław
Warsaw University of Technology
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (16/16 displayed)
- 2024Microstructure and Corrosion of Mg-Based Composites Produced from Custom-Made Powders of AZ31 and Ti6Al4V via Pulse Plasma Sinteringcitations
- 2024A comparative study of oxidation behavior of Co4Sb12 and Co4Sb10.8Se0.6Te0.6 skutterudite thermoelectric materials fabricated via fast SHS-PPS routecitations
- 2023Rapid fabrication of Se-modified skutterudites obtained via self-propagating high-temperature synthesis and pulse plasma sintering routecitations
- 2023In-depth analysis of the influence of bio-silica filler (Didymosphenia geminata frustules) on the properties of Mg matrix compositescitations
- 2022Thermoelectric properties of bismuth-doped magnesium silicide obtained by the self-propagating high-temperature synthesiscitations
- 2022Heat Treatment of NiTi Alloys Fabricated Using Laser Powder Bed Fusion (LPBF) from Elementally Blended Powderscitations
- 2022Influence of Ag particle shape on mechanical and thermal properties of TIM jointscitations
- 2022A comparison of the microstructure-dependent corrosion of dual-structured Mg-Li alloys fabricated by powder consolidation methods: Laser powder bed fusion vs pulse plasma sinteringcitations
- 2022Pressureless Direct Bonding of Au Metallized Substrate with Si Chips by Micro-Ag Particlescitations
- 2021Microstructure and Thermoelectric Properties of Doped FeSi2 with Addition of B4C Nanoparticlescitations
- 2020Thermoelectric properties of Cu2S obtained by high temperature synthesis and sintered by IHP methodcitations
- 2019Microstructure and thermoelectric properties of p and n type doped β-FeSi2 fabricated by mechanical alloying and pulse plasma sinteringcitations
- 2018Skutterudite (CoSb3) thermoelectric nanomaterials fabricated by Pulse Plasma in Liquidcitations
- 2017Design of interfacial Cr 3 C 2 carbide layer via optimization of sintering parameters used to fabricate copper/diamond composites for thermal management applicationscitations
- 2014Thermal conductivity enhancement of copper–diamond composites by sintering with chromium additivecitations
- 2011W/steel joint fabrication using the pulse plasma sintering (PPS) methodcitations
Places of action
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article
Design of interfacial Cr 3 C 2 carbide layer via optimization of sintering parameters used to fabricate copper/diamond composites for thermal management applications
Abstract
To produce metal-diamond composite materials with high thermal conductivity, it is important for a high-quality carbide interface to exist between the metal matrix and diamond. The addition of carbide-forming elements to the matrix positively influences the interfacial thermal conductance (ITC), and is an effective method for improving the bulk thermal conductivity of composite materials. Diamond powder was mixed with Cu0.65Cr alloy powder, using a 1:1 volume ratio. The pulse plasma sintering (PPS) parameters were optimized to control the carbide interface between the diamond and matrix. The microstructures and phase compositions of the fabricated materials were examined using scanning electron microscopy (SEM) and X-ray diffraction (XRD). The interfacial layer was characterized using SEM and focused ion beam (FIB) techniques. The residual Cr content of the matrix was estimated, to determine its influence on the thermal properties of the matrix. To calculate the ITC, differential effective medium (DEM) and Hasselman-Johnson (H–J) models were used. The highest thermal conductivity of 687 W m−1 K−1 was achieved by a composite material that was fabricated at 850 °C over a period of 10 min, which had an 81-nm-thick interfacial carbide layer. An ITCDEM value of 5•107 W m−2 K−1 was obtained.