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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Forbes, Ian
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Publications (9/9 displayed)
- 2021Diamond-doped silica aerogel for solar geoengineeringcitations
- 2013Study of the Al-grading effect in the crystallisation of chalcopyrite Cu(In,Al)Se2 thin films selenised at different temperaturescitations
- 2013Crystallographic properties and elemental migration in two-stage prepared CuIn1−xAlxSe2 thin films for photovoltaic applicationscitations
- 2011Electrical, morphological and structural properties of RF magnetron sputtered Mo thin films for application in thin film photovoltaic solar cellscitations
- 2010CuInSe2 precursor films electro-deposited directly onto MoSe2citations
- 2010Optical properties of thin films of Cu2ZnSnSe4 fabricated by sequential deposition and selenisation
- 2010Control of grain size in sublimation-grown CdTe, and the improvement in performance of devices with systematically increased grain sizecitations
- 2010A feasibility study towards ultra-thin PV solar cell devices by MOCDV based on a p-i-n structure incorporating pyrite
- 2008New routes to sustainable photovoltaics: evaluation of Cu2ZnSnS4 as an alternative absorber materialcitations
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article
Study of the Al-grading effect in the crystallisation of chalcopyrite Cu(In,Al)Se2 thin films selenised at different temperatures
Abstract
Chalcopyrite CuIn1−xAlxSe2 (CIAS) thin films with an atomic ratio of Al/(In + Al) = 0.4 were grown by a two-stage process onto soda-lime glass substrates. The selenisation was carried out at different temperatures, ranging from 400 °C to 550 °C, for metallic precursors layers evaporated with two different sequences. The first sequence, C1, was evaporated with the Al as the last layer, while in the second one, C2, the In was the last evaporated element. The optical, structural and morphological characterisations led to the conclusion that the precursors sequence determines the crystallisation pathway, resulting in C1 the best option due to the homogeneity of the depth distribution of the elements. The influence of the selenisation temperature was also studied, finding 540 °C as the optimum one, since it allows to achieve the highest band gap value for the C1 sequence and for the given composition.