| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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George, Antony
Friedrich Schiller University Jena
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (19/19 displayed)
- 2023Structural and electronic properties of MoS2 and MoSe2 monolayers grown by chemical vapor deposition on Au(111)†citations
- 2023Atomic-scale characterization of contact interfaces between thermally self-assembled Au islands and few-layer MoS2 surfaces on SiO2citations
- 2023High‐Performance Monolayer MoS 2 Field‐Effect Transistors on Cyclic Olefin Copolymer‐Passivated SiO 2 Gate Dielectriccitations
- 2023Regulating Li‐Ion Transport through Ultrathin Molecular Membrane to Enable High‐Performance All‐Solid‐State–Batterycitations
- 2023Regulating Li‐Ion Transport through Ultrathin Molecular Membrane to Enable High‐Performance All‐Solid‐State–Batterycitations
- 2022Exciton spectroscopy and diffusion in MoSe2-WSe2 lateral heterostructures encapsulated in hexagonal boron nitride
- 2022Exciton spectroscopy and diffusion in MoSe2-WSe2 lateral heterostructures encapsulated in hexagonal boron nitride
- 2022Patterned Growth of Transition Metal Dichalcogenide Monolayers and Multilayers for Electronic and Optoelectronic Device Applications.
- 2022Patterned Growth of Transition Metal Dichalcogenide Monolayers and Multilayers for Electronic and Optoelectronic Device Applicationscitations
- 2022Chemical Vapor Deposition of High‐Optical‐Quality Large‐Area Monolayer Janus Transition Metal Dichalcogenidescitations
- 2022Chemical Vapor Deposition of High‐Optical‐Quality Large‐Area Monolayer Janus Transition Metal Dichalcogenidescitations
- 20211D p–n Junction Electronic and Optoelectronic Devices from Transition Metal Dichalcogenide Lateral Heterostructures Grown by One‐Pot Chemical Vapor Deposition Synthesiscitations
- 2021Wafer scale synthesis of organic semiconductor nanosheets for van der Waals heterojunction devicescitations
- 2020Scalable functionalization of optical fibers using atomically thin semiconductors
- 2020Scalable functionalization of optical fibers using atomically thin semiconductorscitations
- 2019Accessing high optical quality of MoS2 monolayers grown by chemical vapor deposition
- 2018Lateral heterostructures of two-dimensional materials by electron-beam induced stitchingcitations
- 2014Patterning of Epitaxial Perovskites from Micro and Nano Molded Stencil Maskscitations
- 2010Microstructure and field emission characteristics of ZnO nanoneedles grown by physical vapor depositioncitations
Places of action
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article
Microstructure and field emission characteristics of ZnO nanoneedles grown by physical vapor deposition
Abstract
ingle crystalline zinc oxide (ZnO) nanoneedles have been grown on Au coated Si (1 0 0) substrates in an inert gas atmosphere by physical vapor deposition (PVD) process. A mixture of ZnO and graphite powder was used as precursor for the production of nanoneedles. Their structure has been assessed by a range of techniques including scanning electron microscope (SEM), high-resolution transmission electron microscopy (HRTEM), Raman spectroscopy, X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). The synthesized ZnO nanoneedles have tip diameter around 30 nm and average length of ∼5 μm. The XRD patterns and HRTEM measurements revealed the highly crystalline phase of wurtzite single crystalline structure, with a preferred 〈0 0 0 1〉 growth direction. Field emission from these nanoneedles was investigated and a low turn on voltage of 5.07 V μm −1 at a current density of 10 μA cm −2 was observed.