| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Golim, Obert
Aalto University
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (4/4 displayed)
- 2024Low-Temperature Wafer-Level Bonding with Cu-Sn-In Solid Liquid Interdiffusion for Microsystem Packagingcitations
- 2024Investigative characterization of delamination at TiW-Cu interface in low-temperature bonded interconnectscitations
- 2023Achieving low-temperature wafer level bonding with Cu-Sn-In ternary at 150 °Ccitations
- 2021Low-temperature Metal Bonding for Optical Device Packagingcitations
Places of action
| Organizations | Location | People |
|---|
article
Investigative characterization of delamination at TiW-Cu interface in low-temperature bonded interconnects
Abstract
The trend for heterogeneous integration has driven the need for a low-temperature bonding process. Cu-Sn-In based solid-liquid interdiffusion (SLID) bonding technology has been presented as a viable option. However, previous studies have also reported that issues might exist in the interconnect interface towards the substrate, leading to the formation of intermetallic layers at undesired locations. This study carried out a series of characterization methods to determine the root cause of this issue. Cross-sectional observations showed that the problem occurs particularly at the TiW-Cu interface. Examination of the adhesion layer showed possible impurities existing in the layers, compromising its adhesion to copper. Residual stress analyses displayed opposing loading conditions at the interface. The interplay of the two factors resulted in the delamination of the TiW-Cu interface, leading to a pathway for Sn–In atoms. Furthermore, several methods are proposed to mitigate this issue.