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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Vickridge, Ian
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (17/17 displayed)
- 2024Exploring OH incorporation pathways in pulsed laser deposited EuOOH thin films
- 2021The carbon and hydrogen contents in ALD-grown ZnO films define a narrow ALD temperature windowcitations
- 2020Harnessing Atomic Layer Deposition and Diffusion to Spatially Localize Rare-Earth Ion Emitterscitations
- 2020Low resistivity amorphous carbon-based thin films employed as anti-reflective coatings on coppercitations
- 2017XPS and NRA investigations during the fabrication of gold nanostructured functionalized screen-printed sensors for the detection of metallic pollutantscitations
- 2015Rutherford Backscattering Spectrometry analysis of iron-containing Bi2Se3 Topological Insulator thin filmscitations
- 2014Multicharacterization approach for studying InAl(Ga)N/Al(Ga)N/GaN heterostructures for high electron mobility transistorscitations
- 2011Ferromagnetism in Ga0.90Mn0.10As1-yPy: From the metallic to the impurity band conduction regimecitations
- 2008Li-ion intercalation in thermal oxide thin films of MoO3 as studied by XPS, RBS, and NRAcitations
- 2007Ageing of V2O5 thin films induced by Li intercalation multi-cyclingcitations
- 2006TaSiN diffusion barriers deposited by reactive magnetron sputteringcitations
- 2005Characterization of SiC thin film obtained by magnetron reactive sputtering : IBA, IR and Raman studies
- 2005Influence of substrate temperature on growth of nanocrystalline silicon carbide by reactive magnetron sputteringcitations
- 2005Control of the reactivity at a metal/silica interfacecitations
- 2004Characterization of SiC thin film obtained by magnetron reactive sputtering : IBA, IR and Raman studies
- 2004Study of thin hafnium oxides deposited by atomic layer depositioncitations
- 2002Oxygen isotopic exchange occurring during dry thermal oxidation of 6H SiCcitations
Places of action
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article
Ageing of V2O5 thin films induced by Li intercalation multi-cycling
Abstract
International audience ; Cyclic voltammetry, XPS, RBS and AFM have been combined to study the ageing mechanism of Li intercalation in V2O5 thin films prepared by thermal oxidation of vanadium metal. Multi-cycling tests were performed in 1 M LiClO4-PC in the potential range E epsilon [3.8, 2.8 V] versus Li/Li+, corresponding to the alpha-to-delta phase transition. XPS and AFM were performed using direct anaerobic and anhydrous transfer. Capacity fading remains inferior to 20% during similar to 2500 cycles. XPS shows slight modifications of the oxide composition with a V4+ concentration increasing from similar to 5% prior to cycling to similar to 16-27% after cycling, due to Li trapped in the oxide film and to the loss of V2O5 active material. The presence of lithium carbonate and lithium-alkyl carbonate species evidences the formation of the so-called SEI layer. AFM evidences the loss of crystalline material by grain exfoliation from the outer V2O5 layer of the oxide film. By further exfoliation, the inner VO2 layer of the oxide film is reached and pits are formed, occupying similar to 9-13% of the surface. This de-cohesion at grain boundaries is attributed to the strain generated by repeated lattice distortions. After 3300 cycles, the disappearance of lithium carbonates, whereas Li-alkyl carbonates and/or Li-alkoxides remain on the surface, indicates the dissolution and/or conversion of the SEI layer. After 4500 cycles, the oxide film became very labile and could be stripped away by rinsing to reveal the vanadium metal substrate. (C) 2007 Elsevier B.V. All rights reserved.