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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Lang, Felix
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (19/19 displayed)
- 2024Ion-induced field screening as a dominant factor in perovskite solar cell operational stabilitycitations
- 2024Resolving electron and hole transport properties in semiconductor materials by constant light-induced magneto transportcitations
- 2024Distributed Feedback Lasing in Thermally Imprinted Phase‐Stabilized CsPbI3 Thin Filmscitations
- 2024Resolving electron and hole transport properties in semiconductor materials by constant light-induced magneto transport.
- 2023Methylammonium-free co-evaporated perovskite absorbers with high radiation and UV tolerance: an option for in-space manufacturing of space-PV?citations
- 2022Revealing the doping density in perovskite solar cells and its impact on device performancecitations
- 202221.6%-efficient monolithic perovskite/Cu(In,Ga)Se2 tandem solar cells with thin conformal hole transport layers for integration on rough bottom cell surfaces
- 2022High Open-Circuit Voltage Lead-Free Cs2AgBiBr6 Double Perovskite Solar Cells from Spray-Coating Deposition
- 2022Understanding performance limiting interfacial recombination in pin Perovskite solar cellscitations
- 2022Quantification of Efficiency Losses Due to Mobile Ions in Perovskite Solar Cells via Fast Hysteresis Measurementscitations
- 2021Quantification of efficiency losses due to mobile ions in Perovskite solar cells via fast hysteresis measurementscitations
- 2021Universal Current Losses in Perovskite Solar Cells Due to Mobile Ionscitations
- 2021Spray‐Coated Lead‐Free Cs 2 AgBiBr 6 Double Perovskite Solar Cells with High Open‐Circuit Voltage
- 2021Universal current losses in Perovskite solar cells due to mobile ionscitations
- 2021Proton radiation hardness of perovskite tandem photovoltaics
- 2020Proton Radiation Hardness of Perovskite Tandem Photovoltaicscitations
- 2017It Takes Two to Tango - Double-Layer Selective Contacts in Perovskite Solar Cells for Improved Device Performance and Reduced Hysteresiscitations
- 2017Efficient light management by textured nanoimprinted layers for perovskite solar cellscitations
- 2017It Takes Two to Tango-Double-Layer Selective Contacts in Perovskite Solar Cells for Improved Device Performance and Reduced Hysteresiscitations
Places of action
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article
Proton Radiation Hardness of Perovskite Tandem Photovoltaics
Abstract
Monolithic [Cs0.05(MA0. 17FA0. 83)0.95]Pb(I0.83Br0.17)3/Cu(In,Ga)Se2 (perovskite/CIGS) tandem solar cells promise high performance and can be processed on flexible substrates, enabling cost-efficient and ultra-lightweight space photovoltaics with power-to-weight and power-to-cost ratios surpassing those of state-of-the-art III-V semiconductor-based multijunctions. However, to become a viable space technology, the full tandem stack must withstand the harsh radiation environments in space. Here, we design tailored operando and ex situ measurements to show that perovskite/CIGS cells retain over 85% of their initial efficiency even after 68 MeV proton irradiation at a dose of 2 × 1012 p+/cm2. We use photoluminescence microscopy to show that the local quasi-Fermi-level splitting of the perovskite top cell is unaffected. We identify that the efficiency losses arise primarily from increased recombination in the CIGS bottom cell and the nickel-oxide-based recombination contact. These results are corroborated by measurements of monolithic perovskite/silicon-heterojunction cells, which severely degrade to 1% of their initial efficiency due to radiation-induced recombination centers in silicon.