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Puthen Veettil, Binesh
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (7/7 displayed)
- 2023Microwave annealing of silicon solar cellscitations
- 2017Controlled Ostwald ripening mediated grain growth for smooth perovskite morphology and enhanced device performancecitations
- 2016Analysis of burn-in photo degradation in low bandgap polymer PTB7 using photothermal deflection spectroscopycitations
- 2016Effect of substrate temperature and radio frequency power on compositional, structural and optical properties of amorphous germanium carbide films deposited using sputteringcitations
- 2016Effect of blend composition on ternary blend organic solar cells using a low band gap polymercitations
- 2015Effect of blend composition on binary organic solar cells using a low band gap polymercitations
- 2014Enhancement of ternary blend organic solar cell efficiency using PTB7 as a sensitizercitations
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article
Effect of substrate temperature and radio frequency power on compositional, structural and optical properties of amorphous germanium carbide films deposited using sputtering
Abstract
Fabrication of Ge<sub>x</sub>C<sub>1 − x</sub> has been a big challenge because of the solubility of C in Ge. Only a small percentage of Ge−C bonds (11.6%) have been introduced so far. In this work, a-Ge<sub>x</sub>C<sub>1 − x</sub> with GeC content up to 21% has been fabricated with 50 W RF power at 250 °C by reactive sputtering methods. The effects of the radio frequency power and substrate temperature on the yield of GeC were analysed in detail. The GeC percentage by volume was found to first increase and then decrease with increasing substrate temperature. Introduction of C into the Ge matrix seems to tune the optical bandgap over a range of 2.7 eV to 1.0 eV depending on the combination of substrate temperature and radio frequency power.