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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Shrestha, Santosh
Bath Institute for Rheumatic Diseases
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Publications (3/3 displayed)
- 2016Extended hot carrier lifetimes observed in bulk In0.265±0.02Ga0.735N under high-density photoexcitationcitations
- 2016Effect of substrate temperature and radio frequency power on compositional, structural and optical properties of amorphous germanium carbide films deposited using sputteringcitations
- 2015Viability Prediction of Ricinus cummunis L. Seeds Using Multispectral Imagingcitations
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article
Effect of substrate temperature and radio frequency power on compositional, structural and optical properties of amorphous germanium carbide films deposited using sputtering
Abstract
Fabrication of Ge<sub>x</sub>C<sub>1 − x</sub> has been a big challenge because of the solubility of C in Ge. Only a small percentage of Ge−C bonds (11.6%) have been introduced so far. In this work, a-Ge<sub>x</sub>C<sub>1 − x</sub> with GeC content up to 21% has been fabricated with 50 W RF power at 250 °C by reactive sputtering methods. The effects of the radio frequency power and substrate temperature on the yield of GeC were analysed in detail. The GeC percentage by volume was found to first increase and then decrease with increasing substrate temperature. Introduction of C into the Ge matrix seems to tune the optical bandgap over a range of 2.7 eV to 1.0 eV depending on the combination of substrate temperature and radio frequency power.