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Jarvis, R. A.
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article
Structural relaxation and optical properties in amorphous Ge33As12Se55 films
Abstract
<p>Amorphous Ge<sub>33</sub>As<sub>12</sub>S<sub>55</sub> films prepared by ultra fast pulsed laser deposition (PLD) have been vacuum annealed over a range of different temperatures. Raman scattering measurements indicated that the features corresponding to Ge-Se and As-Se clusters increase in intensity with increasing annealing temperature (T<sub>a</sub>) up to their respective glass transition temperature, and then decrease with further increasing T<sub>a</sub> up to 300 °C. Optical property measurements showed that the refractive index deceases but the optical band gap increases with increasing T<sub>a</sub>, and both of them could be fitted by the exponential function. The corresponding characteristic time extracted was found not to obey Arrhenius behavior, which is consistent with the existence of a broken network cut by cross-linking bonds and different clusters in films.</p>