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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Pimentel, Ana
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Topics
Publications (15/15 displayed)
- 2022Enhanced Fe-TiO2 Solar Photocatalysts on Porous Platforms for Water Purificationcitations
- 2022A Comparison between Solution-Based Synthesis Methods of ZrO2 Nanomaterials for Energy Storage Applicationscitations
- 2022A Comparison between Solution-Based Synthesis Methods of ZrO2 Nanomaterials for Energy Storage Applicationscitations
- 2019Hybrid (Ag)ZnO/Cs/PMMA nanocomposite thin filmscitations
- 2019Hybrid (Ag)ZnO/Cs/PMMA nanocomposite thin filmscitations
- 2019Tailoring Upconversion and Morphology of Yb/Eu Doped Y2O3 Nanostructures by Acid Composition Mediationcitations
- 2016Photocatalytic behavior of TiO2 films synthesized by microwave irradiationcitations
- 2015Morphological and optical characterization of transparent thin films obtained at low temperature using ZnO nanoparticles
- 2010Manganese nitrate impregnation cycles optimization by addition of surfactants on Ta capacitors with high charge powders (>80000μC/G) manufacturing
- 2009Zinc oxide, a multifunctional material: from material to device applicationscitations
- 2008Effect of annealing on molybdenum doped indium oxide thin films RF sputtered at room temperaturecitations
- 2008Highly stable transparent and conducting gallium-doped zinc oxide thin films for photovoltaic applicationscitations
- 2006Electron transport and optical characteristics in amorphous indium zinc oxide filmscitations
- 2006Multifunctional Thin Film Zinc Oxide Semiconductors: Application to Electronic Devicescitations
- 2005A Study on the Electrical Properties of ZnO Based Transparent TFTscitations
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article
Electron transport and optical characteristics in amorphous indium zinc oxide films
Abstract
This paper discusses the electron transport and the optical characteristics of amorphous indium zinc oxide and the role of the oxygen partial pressure on tailoring its properties. The data show that by varying the oxygen partial pressure during the deposition process from 10−3 to 2 × 10−1 Pa, the electrical resistivity varies from about 10−4 to 2 × 101 Ω cm, which corresponds to a variation on the Hall mobility from 60 to 10 cm2 V−1 s−1. The conductivity and mobility analysis show that the transport of carriers is not band tail limited, as happens in conventional disordered semiconductors, but highly dependent on the ionicity and the presence of oxygen vacancies, where mobility is mainly limited by carrier scattering. The optical characteristics inferred from the transmittance data reveal films with optical gaps in the range of 3.68–3.76 eV, very close to the ones observed on crystalline/polycrystalline IZO films (3.7–3.9 eV).