Materials Map

Discover the materials research landscape. Find experts, partners, networks.

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The Materials Map is an open tool for improving networking and interdisciplinary exchange within materials research. It enables cross-database search for cooperation and network partners and discovering of the research landscape.

The dashboard provides detailed information about the selected scientist, e.g. publications. The dashboard can be filtered and shows the relationship to co-authors in different diagrams. In addition, a link is provided to find contact information.

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Materials Map under construction

The Materials Map is still under development. In its current state, it is only based on one single data source and, thus, incomplete and contains duplicates. We are working on incorporating new open data sources like ORCID to improve the quality and the timeliness of our data. We will update Materials Map as soon as possible and kindly ask for your patience.

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in Cooperation with on an Cooperation-Score of 37%

Topics

Publications (1/1 displayed)

  • 2016The inverse hall-petch relation in nanocrystalline metals101citations

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Zhang, Yong Wei
1 / 1 shared
Srolovitz, David
1 / 65 shared
Quek, Siu Sin
1 / 1 shared
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2016

Co-Authors (by relevance)

  • Zhang, Yong Wei
  • Srolovitz, David
  • Quek, Siu Sin
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article

The inverse hall-petch relation in nanocrystalline metals

  • Zhang, Yong Wei
  • Srolovitz, David
  • Quek, Siu Sin
  • Chooi, Zheng Hoe
Abstract

When the grain size in polycrystalline materials is reduced to the nanometer length scale (nanocrystallinity), observations from experiments and atomistic simulations suggest that the yield strength decreases (softening) as the grain size is decreased. This is in contrast to the Hall-Petch relation observed in larger sized grains. We incorporated grain boundary (GB) sliding and dislocation emission from GB junctions into the classical DDD framework, and recovered the smaller is weaker relationship observed in nanocrystalline materials. This current model shows that the inverse Hall-Petch behavior can be obtained through a relief of stress buildup at GB junctions from GB sliding by emitting dislocations from the junctions. The yield stress is shown to vary with grain size, <i>d</i>, by a <i>d<sup>1/2</sup> </i>relationship when grain sizes are very small. However, pure GB sliding alone without further plastic accomodation by dislocation emission is grain size independent.

Topics
  • impedance spectroscopy
  • polymer
  • grain
  • grain size
  • grain boundary
  • experiment
  • simulation
  • strength
  • dislocation
  • yield strength