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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Odonnell, Kevin
University of Strathclyde
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (15/15 displayed)
- 2019Room temperature cathodoluminescence quenching of Er3+ in AlNOErcitations
- 2015Analysis of the stability of InGaN/GaN multiquantum wells against ion beam intermixingcitations
- 2012Photoluminescence of Eu-doped GaNcitations
- 2012Characterization of InGaN and InAlN epilayers by microdiffraction X-Ray reciprocal space mapping
- 2010Al1-xInxN/GaN bilayers: Structure, morphology, and optical propertiescitations
- 2009Luminescence of Eu ions in AlxGa1-xN across the entire alloy composition rangecitations
- 2008Rare earth doping of III-nitride alloys by ion implantationcitations
- 2006Rare earth doped III-nitrides for optoelectronicscitations
- 2006Influence of the annealing ambient on structural and optical properties of rare earth implanted GaN
- 2005Selectively excited photoluminescence from Eu- implanted GaNcitations
- 2004Development of CdSSe/CdS VCSELs for application to laser cathode ray tubes
- 2002Structural and optical properties of InGaN/GaN layers close to the critical layer thicknesscitations
- 2002Depth profiling InGaN/GaN multiple quantum wells by Rutherford backscattering: the role of intermixingcitations
- 2002Strain and composition distributions in wurtzite InGaN/GaN layers extracted from x-ray reciprocal space mappingcitations
- 2001Compositional pulling effects in InxGa1_xN/GaN layerscitations
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article
Room temperature cathodoluminescence quenching of Er3+ in AlNOEr
Abstract
<p>This paper reports a cathodoluminescence (CL) spectroscopic study of nanogranular AlNOEr<sub>x</sub> samples with erbium content, x, in the range 0.5–3.6 at%. A wide range of erbium concentration was studied with the aim of understanding the concentration quenching of CL. The composition of thin films, deposited by radiofrequency reactive magnetron sputtering, was accurately determined by Energy Dispersive X-ray Spectroscopy (EDS). CL emission was investigated in the extended visible spectral range from 350 nm to 850 nm. The critical concentration of luminescent activator Er<sup>3+</sup> above which CL quenching occurs is 1%; the corresponding critical distance between Er<sup>3+</sup> ions in AlNOEr<sub>x</sub> is about 1.0 nm. The quenching mechanism is discussed. We discount an exchange-mediated interaction in favour of a multipole-multipole phonon-assisted interaction.</p>