| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Edwards, Paul
University of Strathclyde
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (22/22 displayed)
- 2021Correlation between deep-level defects and functional properties of β-(SnxGa1-x)2O3 on Si photodetectorscitations
- 2021(Hydroxy)apatite on cementcitations
- 2020Structural and luminescence imaging and characterisation of semiconductors in the scanning electron microscopecitations
- 2020Metrology of crystal defects through intensity variations in secondary electrons from the diffraction of primary electrons in a scanning electron microscopecitations
- 2020Luminescence behavior of semipolar (10-11) InGaN/GaN "bow-tie" structures on patterned Si substratescitations
- 2019Room temperature cathodoluminescence quenching of Er3+ in AlNOErcitations
- 2017Charge carrier localised in zero-dimensional (CH 3 NH 3 ) 3 Bi 2 1 9 clusterscitations
- 2017Spatially-resolved optical and structural properties of semi-polar (11-22) AlxGa1-xN with x up to 0.56citations
- 2017Charge carrier localised in zero-dimensional (CH3NH3)3Bi219 clusterscitations
- 2017Charge carrier localised in zero-dimensional (CH3NH3)3Bi219 clusterscitations
- 2017Charge carrier localised in zero-dimensional (CH3NH3)3Bi2I9 clusterscitations
- 2017Analysis of doping concentration and composition in wide bandgap AlGaN:Si by wavelength dispersive X-ray spectroscopycitations
- 2016Reprint of
- 2016Electron channelling contrast imaging for III-nitride thin film structurescitations
- 2016Analysis of defect-related inhomogeneous electroluminescence in InGaN/GaN QW LEDscitations
- 2015Digital direct electron imaging of energy-filtered electron backscatter diffraction patternscitations
- 2013Electron channeling contrast imaging studies of nonpolar nitrides using a scanning electron microscopecitations
- 2012Characterization of InGaN and InAlN epilayers by microdiffraction X-Ray reciprocal space mapping
- 2009Star-shaped oligofluorene nanostructured blend materialscitations
- 2006Microfabrication in free-standing gallium nitride using UV laser micromachiningcitations
- 2002GaN microcavities formed by laser lift-off and plasma etchingcitations
- 2001InGaN/GaN quantum well microcavities formed by laser lift-off and plasma etching
Places of action
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article
Room temperature cathodoluminescence quenching of Er3+ in AlNOEr
Abstract
<p>This paper reports a cathodoluminescence (CL) spectroscopic study of nanogranular AlNOEr<sub>x</sub> samples with erbium content, x, in the range 0.5–3.6 at%. A wide range of erbium concentration was studied with the aim of understanding the concentration quenching of CL. The composition of thin films, deposited by radiofrequency reactive magnetron sputtering, was accurately determined by Energy Dispersive X-ray Spectroscopy (EDS). CL emission was investigated in the extended visible spectral range from 350 nm to 850 nm. The critical concentration of luminescent activator Er<sup>3+</sup> above which CL quenching occurs is 1%; the corresponding critical distance between Er<sup>3+</sup> ions in AlNOEr<sub>x</sub> is about 1.0 nm. The quenching mechanism is discussed. We discount an exchange-mediated interaction in favour of a multipole-multipole phonon-assisted interaction.</p>