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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Wen, Xiaoming
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Publications (7/7 displayed)
- 2024Activated charcoal-mediated non-contact carbothermal reduction of TiO2 for controlled synthesis of Magnéli phase titanium suboxidescitations
- 2017Spatial distribution of lead iodide and local passivation on organo-lead halide perovskitecitations
- 2017Inverted Hysteresis in CH3NH3PbI3 Solar Cellscitations
- 2016Extended hot carrier lifetimes observed in bulk In0.265±0.02Ga0.735N under high-density photoexcitationcitations
- 2015Effect of blend composition on binary organic solar cells using a low band gap polymercitations
- 2009Thermal quenching of photoluminescence in ZnO/ZnMgO multiple quantum wells following oxygen implantation and rapid thermal annealingcitations
- 2007Temperature dependent photoluminescence in oxygen ion implanted and rapid thermally annealed ZnOZnMgO multiple quantum wellscitations
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article
Thermal quenching of photoluminescence in ZnO/ZnMgO multiple quantum wells following oxygen implantation and rapid thermal annealing
Abstract
<p>The temperature-dependent photoluminescence in oxygen-implanted and rapid thermally annealed ZnO/ZnMgO multiple quantum wells is investigated. A difference in the thermal quenching of the photoluminescence is found between the implanted and unimplanted quantum wells. Oxygen implantation and subsequent rapid thermal annealing results in the diffusion of magnesium atoms into quantum wells and thus, leads to an increased fluctuation in the potential of the quantum wells and the observation of a large thermal activation energy. However, a high dose of implantation results in large defect clusters and thus an additional nonradiative channel, which leads to a flat potential fluctuation and a small thermal activation energy.</p>