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Paven, C. Le
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article
Thermal oxidation of oxynitride films as a strategy to achieve (Sr<sub>2</sub>Ta<sub>2</sub>O<sub>7</sub>)<sub>100-x</sub>(La<sub>2</sub>Ti<sub>2</sub>O<sub>7</sub>)<sub>x</sub> based oxide perovskite films with x = 1.65
Abstract
This study concerns STLTO compounds of the ferroelectric (Sr 2 Ta 2 O 7) 100-x (La 2 Ti 2 O 7) x solid solution. The purpose is to produce the STLTO composition x = 1.65 as thin films by thermal oxidation of the corresponding oxynitride composition. Indeed, the combination of an STLTO oxide target with a dioxygen-rich reactive atmosphere during the sputtering deposition leads to Sr-deficient oxide thin films, shifting composition and structure from the perovskite to the tetragonal tungsten bronze type. An alternative synthesis pathway is to first deposit, under nitrogen-rich atmosphere, stoichiometric oxynitride films and produce, by thermal annealing under air, the stoichiometric oxide. For low oxidation temperatures ([550-600°C]), samples remain intact and display an oxide character but still contain a significant amount of nitrogen; they could be described as intermediate phases containing nitrogen-nitrogen pairs as demonstrated by Raman. Dielectric characteristics of these original film materials are of interest with a tunability value of 26 % at 30 kV/cm (10 kHz).