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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Warner, Terence Edwin
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (8/8 displayed)
- 2020On the synthesis and structure of the copper-molybdenum oxide bronzes
- 2019Self-Propagating High-Temperature Synthesis of Titanium Carbidecitations
- 2016The effect of trace amounts of copper on the microstructure, stability and oxidation of macroporous silicon carbidecitations
- 2016The effect of trace amounts of copper on the microstructure, stability and oxidation of macroporous silicon carbidecitations
- 2016The role of aluminium as an additive element in the synthesis of porous 4H-silicon carbidecitations
- 2016The role of aluminium as an additive element in the synthesis of porous 4H-silicon carbidecitations
- 2015The role of Aluminium in the synthesis of Mesoporous 4H Silicon Carbide
- 2015The role of Aluminium in the synthesis of Mesoporous 4H Silicon Carbide
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article
The role of aluminium as an additive element in the synthesis of porous 4H-silicon carbide
Abstract
<p>Addition of 5 at.% aluminium to silicon and carbon in the process of forming SiC monoliths for use as diesel particle filters and catalyst supports, creates mechanically stable, well connected, and highly porous 4H-SiC structures. These monoliths have 65 % accessible porosity with pore diameters of 17 − 20 μm. Mixtures of silicon, graphite, aluminium and water, are extruded into honeycomb structures and heated under nitrogen and argon. The 2H-AlN crystalline assembly formed during initial heating under nitrogen at 850 °C acts as a template for the subsequent reaction between silicon and graphite under argon to yield 3C-SiC. During a final high temperature step under argon at 1950 °C, Al-vapour/liquid is crucial for the transformation of 3C-SiC to 4H-SiC. This final step also alters the SiC crystal morphology significantly and produces large by-product crystals of Al<sub>4</sub>C<sub>3</sub>·mSiC·nAlN. The polytypic conversion and recrystallization mechanism were found, in this case, to be independent phenomena.</p>