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| Naji, M. |
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| Ertürk, Emre |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Azam, Siraj |
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| Azevedo, Nuno Monteiro |
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Almeida-Didry, Sonia De
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Publications (5/5 displayed)
- 2023On Recent Progress on Core Shell Nanostructures of Colossal Permittivity Materials for Capacitors: Synthesis and Dielectric Properties
- 2019Comparison of colossal permittivity of CaCu3Ti4O12 with commercial grain boundary barrier layer capacitorcitations
- 2018Control of grain boundary in alumina doped CCTO showing colossal permittivity by core-shell approachcitations
- 2015Capacitance Scaling of Grain Boundaries with Colossal Permittivity of CaCu3Ti4O12-Based Materialscitations
- 2014Leading Role of Grain Boundaries in Colossal Permittivity of Doped and Undoped CCTOcitations
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article
Leading Role of Grain Boundaries in Colossal Permittivity of Doped and Undoped CCTO
Abstract
The role of grain boundaries in the colossal permittivityof doped and undoped calcium copper titanate, CaCu3Ti4O12 (CCTO), is illustrated by a first correlationover four orders of magnitudebetweenand the capacity of grain boundaries, not that of grains, deduced from the analysis of impedance measurements. The DC resistance of the CCTO sample which is essential to make efficient capacitors for technological applications, as well as the loss factor tan(δ), are found to be correlated with the resistance of the grain boundaries rather than that of the grains. The correlation extends over almost seven orders of magnitude. These findings, consistent with the internal barrier layer capacitance (IBLC) model, indicate the leading role of grain boundaries in the origin of the capacitance of CCTO samples.