| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Hueting, Raymond
University of Twente
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (11/11 displayed)
- 2024A Systematic Comparison Study of Different Bonding Technologies for Large Substrate Attachment of Power Electronics
- 2020Epitaxial growth of full range of compositions of (1 1 1) PbZr1- xTixO3 on GaNcitations
- 2015Electrostatic analysis of n-doped SrTiO3 metal-insulator-semiconductor systemscitations
- 2014Analysis of thin-film PZT/LNO stacks on an encapsulated TiN electrodecitations
- 2012Extraction of second order piezoelectric parameters in bulk acoustic wave resonatorscitations
- 2011On the rule of thumb for flipping the dispersion relation in BAW devicescitations
- 2011Exploring Capacitance-Voltage measurements to find the Piezoelectric Coefficient of Aluminum Nitridecitations
- 2010BaxSr1-xTi1.02O3 metal-insulator-metal capacitors on planarized alumina substratescitations
- 2008The trade-off between tuning ratio and quality factor of BaxSr1-xTiO3 MIM capacitors on alumina substrates
- 2007Separation of intrinsic dielectric and resistive electrode losses in ferroelectric capacitors at radio frequencies
- 2006Electrical characterization of thin film ferroelectric capacitors
Places of action
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article
Epitaxial growth of full range of compositions of (1 1 1) PbZr1- xTixO3 on GaN
Abstract
<p>Integrating functional complex oxides with conventional (“non-oxide”) semiconductors emerges to be an important research field and has been attracting great interest. Because of their superior intrinsic material properties, such as a relatively high dielectric constant and polarization, the utilization of PbZr<sub>1-</sub> <sub>x</sub>Ti<sub>x</sub>O<sub>3</sub> (PZT) materials as a dielectric layer is expected to greatly improve the performance of the GaN high electron mobility transistor. The functional PbZr<sub>1-</sub> <sub>x</sub>Ti<sub>x</sub>O<sub>3</sub> exhibits quite different crystal structures and consequently physical properties depending on the composition. In this work we report the growth of full range of compositions of PZT films on MgO buffered GaN substrates. Besides revealing the temperature effect on phase formation and surface morphology, we demonstrated the strong effect of composition on the growth: pure (1 1 1) phase is formed in Ti-rich PZT (x > 0.48) while pyrochlore impurity phase is found in Zr-rich PZT (x < 0.48). By introducing an ultrathin Ti-rich PZT seed layer, we are able to achieve epitaxial growth of Zr-rich PZT. The epitaxial PZT films of different composition all exhibit good ferroelectric properties, showing great promise for future GaN device applications.</p>