| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Nguyen, Minh
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (8/8 displayed)
- 2023Correlated Metals Transparent Conductors with High UV to Visible Transparency on Amorphous Substratescitations
- 2022Numerical investigation of the springback behaviour and residual stresses of a hybrid profile produced by the roll forming process
- 2021Design approach for the development of a digital twin of a generic hybrid lightweight structurecitations
- 2020Epitaxial growth of full range of compositions of (1 1 1) PbZr1- xTixO3 on GaNcitations
- 2019Regionales Innovationskonzept "WIR!-DigiT" - Zentrum für vernetzte digitale Produktoptimierung durch Lebensphasen-übergreifende virtuelle Zwillinge
- 2018Elementary specific modelling of composite rotors with consideration of sequential damage processes
- 2014Analysis of thin-film PZT/LNO stacks on an encapsulated TiN electrodecitations
- 2012The π-conjugated P-flowers C16(PH)8 and C16(PF)8 are potential materials for organic n-type semiconductorscitations
Places of action
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article
Epitaxial growth of full range of compositions of (1 1 1) PbZr1- xTixO3 on GaN
Abstract
<p>Integrating functional complex oxides with conventional (“non-oxide”) semiconductors emerges to be an important research field and has been attracting great interest. Because of their superior intrinsic material properties, such as a relatively high dielectric constant and polarization, the utilization of PbZr<sub>1-</sub> <sub>x</sub>Ti<sub>x</sub>O<sub>3</sub> (PZT) materials as a dielectric layer is expected to greatly improve the performance of the GaN high electron mobility transistor. The functional PbZr<sub>1-</sub> <sub>x</sub>Ti<sub>x</sub>O<sub>3</sub> exhibits quite different crystal structures and consequently physical properties depending on the composition. In this work we report the growth of full range of compositions of PZT films on MgO buffered GaN substrates. Besides revealing the temperature effect on phase formation and surface morphology, we demonstrated the strong effect of composition on the growth: pure (1 1 1) phase is formed in Ti-rich PZT (x > 0.48) while pyrochlore impurity phase is found in Zr-rich PZT (x < 0.48). By introducing an ultrathin Ti-rich PZT seed layer, we are able to achieve epitaxial growth of Zr-rich PZT. The epitaxial PZT films of different composition all exhibit good ferroelectric properties, showing great promise for future GaN device applications.</p>