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| Naji, M. |
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| Ertürk, Emre |
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| Petrov, R. H. | Madrid |
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| Azevedo, Nuno Monteiro |
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| Rignanese, Gian-Marco |
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Dhanak, V. R.
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Topics
Publications (7/7 displayed)
- 2019Low temperature growth and optical properties of α-Ga2O3 deposited on sapphire by plasma enhanced atomic layer depositioncitations
- 2018Band alignments at Ga2O3 heterojunction interfaces with Si and Gecitations
- 2013Templated three-dimensional growth of quasicrystalline leadcitations
- 2011Study of interfaces and band offsets in TiN/amorphous LaLu=3 gate stackscitations
- 2010Experimental structure determination of the chemisorbed overlayers of chlorine and iodine on Au{111}citations
- 2005Low-coverage condensation of K on TiO 2 (1 1 0) 1 × 1citations
- 2001Structural and magnetic properties of self-assembled nanoscale Fe islands on Cu(100)citations
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article
Low temperature growth and optical properties of α-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition
Abstract
Plasma enhanced atomic layer deposition was used to deposit thin films of Ga<sub>2</sub>O<sub>3</sub> on to c-plane sapphire substrates using triethylgallium and O<sub>2</sub> plasma. The influence of substrate temperature and plasma processing parameters on the resultant crystallinity and optical properties of the Ga<sub>2</sub>O<sub>3</sub> films were investigated. The deposition temperature was found to have a significant effect on the film crystallinity. At temperatures below 200°C amorphous Ga<sub>2</sub>O<sub>3</sub> films were deposited. Between 250°C and 350°C the films became predominantly α-Ga<sub>2</sub>O<sub>3</sub>. Above 350°C the deposited films showed a mixture of α-Ga<sub>2</sub>O<sub>3</sub> and ε-Ga<sub>2</sub>O<sub>3</sub> phases. Plasma power and O<sub>2</sub> flow rate were observed to have less influence over the resultant phases present in the films. However, both parameters could be tuned to alter the strain of the film. Ultraviolet transmittance measurements on the Ga<sub>2</sub>O<sub>3</sub> films showed that the bandgaps ranges from 5.0 eV to 5.2 eV with the largest bandgap of 5.2 eV occurring for the α-Ga<sub>2</sub>O<sub>3</sub> phase deposited at 250°C.