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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Massabuau, Fcp
University of Strathclyde
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (19/19 displayed)
- 2024Constant Photocurrent Method to Probe the Sub‐Bandgap Absorption in Wide Bandgap Semiconductor Films: The Case of α‐Ga<sub>2</sub>O<sub>3</sub>citations
- 2024Constant Photocurrent Method to Probe the Sub-Bandgap Absorption in Wide Bandgap Semiconductor Films: The Case of α-Ga 2 O 3
- 2021Defect structures in (001) zincblende GaN/3CSiC nucleation layerscitations
- 2021Defect structures in (001) zincblende GaN/3C-SiC nucleation layerscitations
- 2021Directly correlated microscopy of trench defects in InGaN quantum wellscitations
- 2020Piezoelectric III-V and II-VI semiconductorscitations
- 2020Integrated wafer scale growth of single crystal metal films and high quality graphenecitations
- 2020Dislocations as channels for the fabrication of sub-surface porous GaN by electrochemical etchingcitations
- 2019Investigation of MOVPE-grown zincblende GaN nucleation layers on 3CSiC/Si substratescitations
- 2019Thick adherent diamond films on AlN with low thermal barrier resistancecitations
- 2019Low temperature growth and optical properties of α-Ga2O3 deposited on sapphire by plasma enhanced atomic layer depositioncitations
- 2017Mechanisms preventing trench defect formation in InGaN/GaN quantum well structures using hydrogen during GaN barrier growth
- 2017X-ray diffraction analysis of cubic zincblende III-nitrides
- 2017Dislocations in AlGaN: core structure, atom segregation, and optical propertiescitations
- 2014Structure and strain relaxation effects of defects in InxGa1-xN epilayerscitations
- 2014Structure and strain relaxation effects of defects in In x Ga 1-x N epilayers
- 2013Correlations between the morphology and emission properties of trench defects in InGaN/GaN quantum wellscitations
- 2012Morphological, structural, and emission characterization of trench defects in InGaN/GaN quantum well structurescitations
- 2011The effects of Si doping on dislocation movement and tensile stress in GaN filmscitations
Places of action
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article
Low temperature growth and optical properties of α-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition
Abstract
Plasma enhanced atomic layer deposition was used to deposit thin films of Ga<sub>2</sub>O<sub>3</sub> on to c-plane sapphire substrates using triethylgallium and O<sub>2</sub> plasma. The influence of substrate temperature and plasma processing parameters on the resultant crystallinity and optical properties of the Ga<sub>2</sub>O<sub>3</sub> films were investigated. The deposition temperature was found to have a significant effect on the film crystallinity. At temperatures below 200°C amorphous Ga<sub>2</sub>O<sub>3</sub> films were deposited. Between 250°C and 350°C the films became predominantly α-Ga<sub>2</sub>O<sub>3</sub>. Above 350°C the deposited films showed a mixture of α-Ga<sub>2</sub>O<sub>3</sub> and ε-Ga<sub>2</sub>O<sub>3</sub> phases. Plasma power and O<sub>2</sub> flow rate were observed to have less influence over the resultant phases present in the films. However, both parameters could be tuned to alter the strain of the film. Ultraviolet transmittance measurements on the Ga<sub>2</sub>O<sub>3</sub> films showed that the bandgaps ranges from 5.0 eV to 5.2 eV with the largest bandgap of 5.2 eV occurring for the α-Ga<sub>2</sub>O<sub>3</sub> phase deposited at 250°C.