| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Suihkonen, Sami
VTT Technical Research Centre of Finland
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (25/25 displayed)
- 2024Metalorganic Chemical Vapor Deposition of AlN on High Degree Roughness Vertical Surfaces for MEMS Fabricationcitations
- 2024Investigative characterization of delamination at TiW-Cu interface in low-temperature bonded interconnectscitations
- 2023Effect of atomic layer annealing in plasma-enhanced atomic layer deposition of aluminum nitride on silicon
- 2020Atomic Layer Deposition of PbS Thin Films at Low Temperaturescitations
- 2020MOCVD Al(Ga)N Insulator for Alternative Silicon-On-Insulator Structurecitations
- 2020Metalorganic chemical vapor deposition of aluminum nitride on vertical surfacescitations
- 2019Two-dimensional plasmons in a GaN/AlGaN heterojunctioncitations
- 2019Two-dimensional plasmons in a GaN/AlGaN heterojunction:Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronicscitations
- 2019Terahertz Emission due to Radiative Decay of Hot 2D Plasmons in AlGaN/GaN Heterojunction
- 2019P-Channel GaN transistor based on p-GaN/AlGaN/GaN on Sicitations
- 2019Selective terahertz emission due to electrically excited 2D plasmons in AlGaN/GaN heterostructurecitations
- 2017MOVPE growth of GaN on 6-inch SOI-substratescitations
- 2016A new system for sodium flux growth of bulk GaN:Part I : System developmentcitations
- 2016Incorporation and effects of impurities in different growth zones within basic ammonothermal GaNcitations
- 2016A new system for sodium flux growth of bulk GaNcitations
- 2016A new system for sodium flux growth of bulk GaNcitations
- 2015Application of UVA-LED based photocatalysis for plywood mill wastewater treatmentcitations
- 2014Synchrotron radiation x-ray topography and defect selective etching analysis of threading dislocations in GaN.citations
- 2014Effect of growth temperature on the epitaxial growth of ZnO on GaN by ALDcitations
- 2014Synchrotron radiation x-ray topography and defect selective etching analysis of threading dislocations in GaNcitations
- 2009Maskless roughening of sapphire substrates for enhanced light extraction of nitride based blue LEDscitations
- 2008Enhanced electroluminescence in 405 nm InGaN/GaN LEDs by optimized electron blocking layercitations
- 2007Control of the morphology of InGaN/GaN quantum wells grown by metalorganic chemical vapor depositioncitations
- 2007Reduction of threading dislocation density in A1 0.12 Ga 0.88 N epilayers by a multistep techniquecitations
- 2006Morphology optimization of MOCVD-grown GaN nucleation layers by the multistep techniquecitations
Places of action
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article
Incorporation and effects of impurities in different growth zones within basic ammonothermal GaN
Abstract
The ammonothermal method is one of the most promising candidates for large-scale bulk GaN growth due to its scalability and high crystalline quality. However, emphasis needs to be put on understanding the incorporation and effects of impurities during growth. This article discusses how impurities are incorporated in different growth zones in basic ammonothermal GaN, and how they affect the structural, electrical and optical properties of the grown crystal. The influence of growth time on the impurity incorporation is also studied. We measure the oxygen, silicon, and carbon impurity concentrations using secondary ion mass spectrometry, and measure their effect on the lattice constant by high resolution x-ray diffraction (HR-XRD). We determine the resulting free carrier concentration by spatially resolved Fourier transform infrared spectroscopy and study the optical properties by spatially resolved low-temperature photoluminescence. We find that oxygen is incorporated preferentially in different growth regions and its incorporation efficiency depends on the growth direction. The oxygen concentration varies from 6.3×1020 cm−3 for growth on the {112¯2} planes to 2.2×1019 cm−3 for growth on the (0001) planes, while silicon and carbon concentration variation is negligible. This results in a large variation in impurity concentration over a small length scale, which causes significant differences in the strain within the boule, as determined by HR-XRD on selected areas. The impurity concentration variation induces large differences in the free carrier concentration, and directly affects the photoluminescence intensity.