| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Tukiainen, Antti
Tampere University
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (23/23 displayed)
- 2024Bridging the gap between surface physics and photonicscitations
- 2024Ti3+ Self-Doping-Mediated Optimization of TiO2 Photocatalyst Coating Grown by Atomic Layer Depositioncitations
- 2022Insights into Tailoring of Atomic Layer Deposition Grown TiO2 as Photoelectrode Coating
- 2022Luminescent (Er,Ho)2O3 thin films by ALD to enhance the performance of silicon solar cellscitations
- 2022Low-Temperature Route to Direct Amorphous to Rutile Crystallization of TiO2Thin Films Grown by Atomic Layer Depositioncitations
- 2022Tunable Ti3+-Mediated Charge Carrier Dynamics of Atomic Layer Deposition-Grown Amorphous TiO2citations
- 2021Comparison of the heat-treatment effect on carrier dynamics in TiO2 thin films deposited by different methodscitations
- 2021Luminescent (Er,Ho)2O3 thin films by ALD to enhance the performance of silicon solar cellscitations
- 2021Interface Engineering of TiO2 Photoelectrode Coatings Grown by Atomic Layer Deposition on Siliconcitations
- 2020Optimization of photogenerated charge carrier lifetimes in ald grown tio2 for photonic applicationscitations
- 2019Thermophotonic cooling in GaAs based light emitterscitations
- 2019Highly efficient charge separation in model Z-scheme TiO2/TiSi2/Si photoanode by micropatterned titanium silicide interlayercitations
- 2019Observation of local electroluminescent cooling and identifying the remaining challenges
- 2018Surface doping of GaxIn1−xAs semiconductor crystals with magnesiumcitations
- 2017Structured metal/polymer back reflectors for III-V solar cells
- 2016High-efficiency GaInP/GaAs/GaInNAs solar cells grown by combined MBE-MOCVD techniquecitations
- 2016Determination of composition and energy gaps of GaInNAsSb layers grown by MBEcitations
- 2016Optical Energy Transfer and Loss Mechanisms in Coupled Intracavity Light Emitterscitations
- 2016Combined MBE-MOCVD process for high-efficiency multijunction solar cells
- 2016High efficiency multijunction solar cells: Electrical and optical properties of the dilute nitride sub-junctions
- 2015Defects in dilute nitride solar cells
- 2015Dilute nitrides for boosting the efficiency of III-V multijunction solar cells
- 2004Effects of rapid thermal annealing on deep levels in n -GaInPcitations
Places of action
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article
Determination of composition and energy gaps of GaInNAsSb layers grown by MBE
Abstract
<p>We present a method to accurately determine the composition of GaInNAsSb heterostructures and a modified band anti-crossing model to calculate the corresponding bandgaps. The composition determination method is based on combining x-ray diffractometry and energy dispersive x-ray spectroscopy measurements. The modified band anti-crossing model was derived from the model known for GaInNAs and using band-gap composition relations for GaInAs, GaInSb, InAsSb and GaAsSb. The model parameters were defined by fitting with experimental bandgap data retrieved from photoluminescence. For validation and data fitting we used experimental samples with N composition in the range of 0-0.06, In composition from 0 to 0.17, and Sb composition in the range of 0-0.08. All samples were thermally annealed to minimize the band gap shift caused by the short range ordering effects in GaInNAsSb crystal. The modified model yields an excellent fit to the experimental band gap data with an accuracy of ~20 meV, and is a practical tool for designing, fabricating and analyzing optoelectronics devices.</p>