| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Isoaho, Riku
Tampere University
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (9/9 displayed)
- 2023Tuneable Nonlinear Spin Response in a Nonmagnetic Semiconductor
- 2021Room-temperature electron spin polarization exceeding 90% in an opto-spintronic semiconductor nanostructure via remote spin filteringcitations
- 2021Room-temperature electron spin polarization exceeding 90% in an opto-spintronic semiconductor nanostructure via remote spin filteringcitations
- 2019Influence of ex-situ annealing on the properties of MgF2 thin films deposited by electron beam evaporationcitations
- 2016High-efficiency GaInP/GaAs/GaInNAs solar cells grown by combined MBE-MOCVD techniquecitations
- 2016Determination of composition and energy gaps of GaInNAsSb layers grown by MBEcitations
- 2016Combined MBE-MOCVD process for high-efficiency multijunction solar cells
- 2016High efficiency multijunction solar cells: Electrical and optical properties of the dilute nitride sub-junctions
- 2015Dilute nitrides for boosting the efficiency of III-V multijunction solar cells
Places of action
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article
Determination of composition and energy gaps of GaInNAsSb layers grown by MBE
Abstract
<p>We present a method to accurately determine the composition of GaInNAsSb heterostructures and a modified band anti-crossing model to calculate the corresponding bandgaps. The composition determination method is based on combining x-ray diffractometry and energy dispersive x-ray spectroscopy measurements. The modified band anti-crossing model was derived from the model known for GaInNAs and using band-gap composition relations for GaInAs, GaInSb, InAsSb and GaAsSb. The model parameters were defined by fitting with experimental bandgap data retrieved from photoluminescence. For validation and data fitting we used experimental samples with N composition in the range of 0-0.06, In composition from 0 to 0.17, and Sb composition in the range of 0-0.08. All samples were thermally annealed to minimize the band gap shift caused by the short range ordering effects in GaInNAsSb crystal. The modified model yields an excellent fit to the experimental band gap data with an accuracy of ~20 meV, and is a practical tool for designing, fabricating and analyzing optoelectronics devices.</p>