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Liu, Huiyun
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Publications (7/7 displayed)
- 2023Mutations in yeast Pcf11, a conserved protein essential for mRNA 3′ end processing and transcription termination, elicit the Environmental Stress Response
- 2023Nanowires in Terahertz Photonics
- 2022The Effects of Surfaces and Surface Passivation on the Electrical Properties of Nanowires and Other Nanostructures
- 2019Data for Defect dynamics in self-catalyzed III-V semiconductor nanowires
- 2018Stable defects in semiconductor nanowirescitations
- 2017Nonradiative step facets in semiconductor nanowirescitations
- 2016Characterization of 6.1 Å III-V materials grown on GaAs and Si: a comparison of GaSb/GaAs epitaxy and GaSb/AlSb/Si epitaxycitations
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Characterization of 6.1 Å III-V materials grown on GaAs and Si: a comparison of GaSb/GaAs epitaxy and GaSb/AlSb/Si epitaxy
Abstract
GaSb p–i–nphotodiodes were grown on GaAs and Si, using interfacial misfit arrays, and on native GaSb. For the samples grown on GaAs and Si, high-resolution transmission electron microscopy images revealed interface atomic periodicities in agreement with atomistic modeling. Surface defect densities of ~View the MathML source were measured for both samples. Atomic force microscopy scans revealed surface roughnesses of around 1.6 nm, compared with 0.5 nm for the sample grown on native GaSb. Dark current and spectral response measurements were used to study the electrical and optoelectronic properties of all three samples.